Abstract

Nb-based Josephson junctions have been fabricated, which can select one of two states depending on the relative magnetization of their ferromagnetic barrier layers. To minimize the free-layer switching energy, while maintaining adequate thermal stability at 4.2 K, a dilute Cu-permalloy alloy [Cu 0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms ∼ 80 emu/cm3) is used. The optimal thickness of the permalloy (Ni80Fe20) fixed-layer is shown to be 2.4 nm. Such devices exhibit switching at magnetic fields as low as 5 Oe, demonstrating their potential use in low power non-volatile memory for superconductor digital circuits.

Original languageEnglish (US)
Article number022602
JournalApplied Physics Letters
Volume104
Issue number2
DOIs
StatePublished - Jan 13 2014

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Permalloys (trademark)
barrier layers
Josephson junctions
digital electronics
magnetic fields
thermal stability
saturation
magnetization
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers. / Abd El Qader, Makram; Singh, Rakesh; Galvin, Sarah N.; Yu, L.; Rowell, J. M.; Newman, Nathan.

In: Applied Physics Letters, Vol. 104, No. 2, 022602, 13.01.2014.

Research output: Contribution to journalArticle

Abd El Qader, Makram ; Singh, Rakesh ; Galvin, Sarah N. ; Yu, L. ; Rowell, J. M. ; Newman, Nathan. / Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers. In: Applied Physics Letters. 2014 ; Vol. 104, No. 2.
@article{e2f647b470494a3f9940f4f008e93d2d,
title = "Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers",
abstract = "Nb-based Josephson junctions have been fabricated, which can select one of two states depending on the relative magnetization of their ferromagnetic barrier layers. To minimize the free-layer switching energy, while maintaining adequate thermal stability at 4.2 K, a dilute Cu-permalloy alloy [Cu 0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms ∼ 80 emu/cm3) is used. The optimal thickness of the permalloy (Ni80Fe20) fixed-layer is shown to be 2.4 nm. Such devices exhibit switching at magnetic fields as low as 5 Oe, demonstrating their potential use in low power non-volatile memory for superconductor digital circuits.",
author = "{Abd El Qader}, Makram and Rakesh Singh and Galvin, {Sarah N.} and L. Yu and Rowell, {J. M.} and Nathan Newman",
year = "2014",
month = "1",
day = "13",
doi = "10.1063/1.4862195",
language = "English (US)",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers

AU - Abd El Qader, Makram

AU - Singh, Rakesh

AU - Galvin, Sarah N.

AU - Yu, L.

AU - Rowell, J. M.

AU - Newman, Nathan

PY - 2014/1/13

Y1 - 2014/1/13

N2 - Nb-based Josephson junctions have been fabricated, which can select one of two states depending on the relative magnetization of their ferromagnetic barrier layers. To minimize the free-layer switching energy, while maintaining adequate thermal stability at 4.2 K, a dilute Cu-permalloy alloy [Cu 0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms ∼ 80 emu/cm3) is used. The optimal thickness of the permalloy (Ni80Fe20) fixed-layer is shown to be 2.4 nm. Such devices exhibit switching at magnetic fields as low as 5 Oe, demonstrating their potential use in low power non-volatile memory for superconductor digital circuits.

AB - Nb-based Josephson junctions have been fabricated, which can select one of two states depending on the relative magnetization of their ferromagnetic barrier layers. To minimize the free-layer switching energy, while maintaining adequate thermal stability at 4.2 K, a dilute Cu-permalloy alloy [Cu 0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms ∼ 80 emu/cm3) is used. The optimal thickness of the permalloy (Ni80Fe20) fixed-layer is shown to be 2.4 nm. Such devices exhibit switching at magnetic fields as low as 5 Oe, demonstrating their potential use in low power non-volatile memory for superconductor digital circuits.

UR - http://www.scopus.com/inward/record.url?scp=84893105722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893105722&partnerID=8YFLogxK

U2 - 10.1063/1.4862195

DO - 10.1063/1.4862195

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 022602

ER -