Suspended Greek cross test structures for measuring the sheet resistance of non-standard cleanroom materials

S. Enderling, C. L. Brown, S. Smith, M. H. Dicks, J. T M Stevenson, A. W S Ross, M. Mitkova, Michael Kozicki, A. J. Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A novel method is reported to measure the sheet resistance of materials that are incompatible with a CMOS process using suspended polysilicon Greek cross test structures. To demonstrate the technique, gold (Au) was blanket evaporated in various thicknesses onto the test structures and the sheet resistance extracted. Sheet resistances ranging from 0.30Ω/□. to 0.10Ω/□ were measured for the deposited Au films on Greek cross structures with arm widths ranging between 5 and 20μm. The extracted resistivity of 4.85×10-8Ωm agrees with values found in the literature [5] (3.0×10-8Ωm-5.0×10 -8Ωm) demonstrating that the structures are fully capable of measuring sheet resistance of blanket deposited films.

Original languageEnglish (US)
Title of host publicationIEEE International Conference on Microelectronic Test Structures
Pages1-4
Number of pages4
StatePublished - 2005
EventICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium
Duration: Apr 4 2005Apr 7 2005

Other

OtherICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures
CountryBelgium
CityLeuven
Period4/4/054/7/05

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Enderling, S., Brown, C. L., Smith, S., Dicks, M. H., Stevenson, J. T. M., Ross, A. W. S., Mitkova, M., Kozicki, M., & Walton, A. J. (2005). Suspended Greek cross test structures for measuring the sheet resistance of non-standard cleanroom materials. In IEEE International Conference on Microelectronic Test Structures (pp. 1-4). [1.1]