Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM

G. Brill, David Smith, D. Chandrasekhar, Y. Gogotsi, A. Prociuk, S. Sivananthan

Research output: Contribution to journalArticle

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Abstract

Growth of Ge/Si follows the Stranski-Krastanov growth mode (2D→3D) because of the 4.2% lattice mismatch between Ge and Si. However, the growth mode can be altered to Frank-Van der Merwe (layer-by-layer) by depositing a suitable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si(0 0 1) MBE layers with and without As deposition prior to Ge growth in order to investigate the details of surfactant-mediated epitaxy. Raman spectroscopy shows that without As surfactant use, Ge and Si interdiffuse at the interface and form an alloy. Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slowly relieve misfit strain through the accommodation of Lomer edge dislocations at the interface leaving a relaxed, nearly defect-free layer.

Original languageEnglish (US)
Pages (from-to)538-541
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - May 1999

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Surface-Active Agents
Raman spectroscopy
Surface active agents
surfactants
Transmission electron microscopy
transmission electron microscopy
Edge dislocations
Lattice mismatch
Epitaxial growth
Molecular beam epitaxy
accommodation
edge dislocations
epitaxy
Defects
Electrons
shift
defects
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM. / Brill, G.; Smith, David; Chandrasekhar, D.; Gogotsi, Y.; Prociuk, A.; Sivananthan, S.

In: Journal of Crystal Growth, Vol. 201, 05.1999, p. 538-541.

Research output: Contribution to journalArticle

Brill, G. ; Smith, David ; Chandrasekhar, D. ; Gogotsi, Y. ; Prociuk, A. ; Sivananthan, S. / Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM. In: Journal of Crystal Growth. 1999 ; Vol. 201. pp. 538-541.
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