Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM

G. Brill, David Smith, D. Chandrasekhar, Y. Gogotsi, A. Prociuk, S. Sivananthan

Research output: Contribution to journalConference article

7 Scopus citations

Abstract

Growth of Ge/Si follows the Stranski-Krastanov growth mode (2D→3D) because of the 4.2% lattice mismatch between Ge and Si. However, the growth mode can be altered to Frank-Van der Merwe (layer-by-layer) by depositing a suitable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si(0 0 1) MBE layers with and without As deposition prior to Ge growth in order to investigate the details of surfactant-mediated epitaxy. Raman spectroscopy shows that without As surfactant use, Ge and Si interdiffuse at the interface and form an alloy. Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slowly relieve misfit strain through the accommodation of Lomer edge dislocations at the interface leaving a relaxed, nearly defect-free layer.

Original languageEnglish (US)
Pages (from-to)538-541
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - May 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: Aug 31 1998Sep 4 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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