Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

S. Tari, G. Brill, S. Sivananthan, M. Floyd, David Smith

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The effect of As as a surfactant for the Ge(211)/Si(211) growth orientation was investigated. An attempt was made to compare the effect of growth rates and growth temperatures on the overall layer quality. The resultant data was analyzed in detail.

Original languageEnglish (US)
Pages (from-to)1562-1566
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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