Surface transfer doping of MoO3on hydrogen terminated diamond with an Al2O3interfacial layer

Yu Yang, Franz A. Koeck, Xingye Wang, Robert J. Nemanich

Research output: Contribution to journalArticlepeer-review

Abstract

A thin layer of Al2O3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al2O3/H-terminated diamond and MoO3/H-terminated diamond, respectively. Compared to the MoO3/H-terminated diamond structure, a higher hole mobility was achieved with Al2O3 inserted as an interface layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.

Original languageEnglish (US)
Article number191602
JournalApplied Physics Letters
Volume120
Issue number19
DOIs
StatePublished - May 9 2022
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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