Abstract
An analysis of the thermodynamics of epitaxy in thin films is presented which includes the effects of the surface stresses of the free surface and the film-substrate interface. It is shown that these effects, which are usually ignored in the theory of epitaxy, can have a major influence on both the critical thickness for epitaxy and on the partitioning of the misfit strain between the volume elastic strain and interface dislocations.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 815-817 |
| Number of pages | 3 |
| Journal | Journal of Electronic Materials |
| Volume | 20 |
| Issue number | 10 |
| State | Published - Oct 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy (miscellaneous)