Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

M. C. Tamargo; R. E. Nahory; B. J. Skromme; S. M. Shibli; A. L. Weaver; R. J. Martin; H. H. Farrell

doi:10.1016/0022-0248(91)91073-J

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

M. C. Tamargo, R. E. Nahory, B. J. Skromme, S. M. Shibli, A. L. Weaver, R. J. Martin, H. H. Farrell

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We describe a simple model, based on counting of valence electrons at the interface, which can predict the surface reconstructions which provide optimal heteroepitaxial growth. Vertical photocurrent measurements on a series of ZnSe/GaAs heterostructures grown by molecular beam epitaxy, using various GaAs surface reconstructions, support the model predictions that surfaces which provide nearly equal number of the constituent atoms for interface bonds produce the highest quality interfaces.

Original language	English (US)
Pages (from-to)	741-746
Number of pages	6
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91073-J
State	Published - May 2 1991
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(91)91073-J

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abstract = "We describe a simple model, based on counting of valence electrons at the interface, which can predict the surface reconstructions which provide optimal heteroepitaxial growth. Vertical photocurrent measurements on a series of ZnSe/GaAs heterostructures grown by molecular beam epitaxy, using various GaAs surface reconstructions, support the model predictions that surfaces which provide nearly equal number of the constituent atoms for interface bonds produce the highest quality interfaces.",

author = "Tamargo, {M. C.} and Nahory, {R. E.} and Skromme, {B. J.} and Shibli, {S. M.} and Weaver, {A. L.} and Martin, {R. J.} and Farrell, {H. H.}",

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AU - Tamargo, M. C.

AU - Nahory, R. E.

AU - Skromme, B. J.

AU - Shibli, S. M.

AU - Weaver, A. L.

AU - Martin, R. J.

AU - Farrell, H. H.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - We describe a simple model, based on counting of valence electrons at the interface, which can predict the surface reconstructions which provide optimal heteroepitaxial growth. Vertical photocurrent measurements on a series of ZnSe/GaAs heterostructures grown by molecular beam epitaxy, using various GaAs surface reconstructions, support the model predictions that surfaces which provide nearly equal number of the constituent atoms for interface bonds produce the highest quality interfaces.

AB - We describe a simple model, based on counting of valence electrons at the interface, which can predict the surface reconstructions which provide optimal heteroepitaxial growth. Vertical photocurrent measurements on a series of ZnSe/GaAs heterostructures grown by molecular beam epitaxy, using various GaAs surface reconstructions, support the model predictions that surfaces which provide nearly equal number of the constituent atoms for interface bonds produce the highest quality interfaces.

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EP - 746

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

Abstract

ASJC Scopus subject areas

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