Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

M. C. Tamargo, R. E. Nahory, B. J. Skromme, S. M. Shibli, A. L. Weaver, R. J. Martin, H. H. Farrell

Research output: Contribution to journalArticle

29 Scopus citations


We describe a simple model, based on counting of valence electrons at the interface, which can predict the surface reconstructions which provide optimal heteroepitaxial growth. Vertical photocurrent measurements on a series of ZnSe/GaAs heterostructures grown by molecular beam epitaxy, using various GaAs surface reconstructions, support the model predictions that surfaces which provide nearly equal number of the constituent atoms for interface bonds produce the highest quality interfaces.

Original languageEnglish (US)
Pages (from-to)741-746
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - May 2 1991


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Tamargo, M. C., Nahory, R. E., Skromme, B. J., Shibli, S. M., Weaver, A. L., Martin, R. J., & Farrell, H. H. (1991). Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy. Journal of Crystal Growth, 111(1-4), 741-746.