Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy

M. C. Tamargo, R. E. Nahory, Brian Skromme, S. M. Shibli, A. L. Weaver, R. J. Martin, H. H. Farrell

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We describe a simple model, based on counting of valence electrons at the interface, which can predict the surface reconstructions which provide optimal heteroepitaxial growth. Vertical photocurrent measurements on a series of ZnSe/GaAs heterostructures grown by molecular beam epitaxy, using various GaAs surface reconstructions, support the model predictions that surfaces which provide nearly equal number of the constituent atoms for interface bonds produce the highest quality interfaces.

Original languageEnglish (US)
Pages (from-to)741-746
Number of pages6
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
StatePublished - May 2 1991
Externally publishedYes

Fingerprint

Surface reconstruction
Epitaxial growth
Stoichiometry
stoichiometry
Photocurrents
Molecular beam epitaxy
Heterojunctions
Atoms
photocurrents
Electrons
counting
molecular beam epitaxy
valence
predictions
atoms
gallium arsenide
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Tamargo, M. C., Nahory, R. E., Skromme, B., Shibli, S. M., Weaver, A. L., Martin, R. J., & Farrell, H. H. (1991). Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy. Journal of Crystal Growth, 111(1-4), 741-746. https://doi.org/10.1016/0022-0248(91)91073-J

Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy. / Tamargo, M. C.; Nahory, R. E.; Skromme, Brian; Shibli, S. M.; Weaver, A. L.; Martin, R. J.; Farrell, H. H.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 741-746.

Research output: Contribution to journalArticle

Tamargo, MC, Nahory, RE, Skromme, B, Shibli, SM, Weaver, AL, Martin, RJ & Farrell, HH 1991, 'Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy', Journal of Crystal Growth, vol. 111, no. 1-4, pp. 741-746. https://doi.org/10.1016/0022-0248(91)91073-J
Tamargo MC, Nahory RE, Skromme B, Shibli SM, Weaver AL, Martin RJ et al. Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy. Journal of Crystal Growth. 1991 May 2;111(1-4):741-746. https://doi.org/10.1016/0022-0248(91)91073-J
Tamargo, M. C. ; Nahory, R. E. ; Skromme, Brian ; Shibli, S. M. ; Weaver, A. L. ; Martin, R. J. ; Farrell, H. H. / Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy. In: Journal of Crystal Growth. 1991 ; Vol. 111, No. 1-4. pp. 741-746.
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