SURFACE ROUGHNESS SCATTERING AT THE Si-SiO2 INTERFACE.

S. M. Goodnick; R. G. Gann; J. R. Sites; David K Ferry; C. W. Wilmsen; D. Fathy; O. L. Krivanek

doi:10.1116/1.582696

SURFACE ROUGHNESS SCATTERING AT THE Si-SiO₂ INTERFACE.

S. M. Goodnick, R. G. Gann, J. R. Sites, David K Ferry, C. W. Wilmsen, D. Fathy, O. L. Krivanek

Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. The authors have studied, on the same sample, high resolution TEM cross sections of the Si-SiO//2 interface and detailed temperature dependent electronic and magnetic transport measurements. The experimental mobility data are compared to a model containing terms for surface roughness and impurity scattering including carrier screening. The statistical properties of the interface fluctuations appear as parameters which are adjusted to fit the transport data. While the TEM pictures indicated an interfacial boundary which deviated by only one atomic layer, an assumed peak-to-peak deviation of approximately five atomic layers is required to fit the experimental mobility.

Original language	English (US)
Pages (from-to)	803-808
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	1
Issue number	3
DOIs	https://doi.org/10.1116/1.582696
State	Published - 1983
Event	Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.582696

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title = "SURFACE ROUGHNESS SCATTERING AT THE Si-SiO2 INTERFACE.",

abstract = "Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. The authors have studied, on the same sample, high resolution TEM cross sections of the Si-SiO//2 interface and detailed temperature dependent electronic and magnetic transport measurements. The experimental mobility data are compared to a model containing terms for surface roughness and impurity scattering including carrier screening. The statistical properties of the interface fluctuations appear as parameters which are adjusted to fit the transport data. While the TEM pictures indicated an interfacial boundary which deviated by only one atomic layer, an assumed peak-to-peak deviation of approximately five atomic layers is required to fit the experimental mobility.",

author = "Goodnick, {S. M.} and Gann, {R. G.} and Sites, {J. R.} and Ferry, {David K} and Wilmsen, {C. W.} and D. Fathy and Krivanek, {O. L.}",

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AU - Goodnick, S. M.

AU - Gann, R. G.

AU - Sites, J. R.

AU - Ferry, David K

AU - Wilmsen, C. W.

AU - Fathy, D.

AU - Krivanek, O. L.

PY - 1983

Y1 - 1983

N2 - Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. The authors have studied, on the same sample, high resolution TEM cross sections of the Si-SiO//2 interface and detailed temperature dependent electronic and magnetic transport measurements. The experimental mobility data are compared to a model containing terms for surface roughness and impurity scattering including carrier screening. The statistical properties of the interface fluctuations appear as parameters which are adjusted to fit the transport data. While the TEM pictures indicated an interfacial boundary which deviated by only one atomic layer, an assumed peak-to-peak deviation of approximately five atomic layers is required to fit the experimental mobility.

AB - Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. The authors have studied, on the same sample, high resolution TEM cross sections of the Si-SiO//2 interface and detailed temperature dependent electronic and magnetic transport measurements. The experimental mobility data are compared to a model containing terms for surface roughness and impurity scattering including carrier screening. The statistical properties of the interface fluctuations appear as parameters which are adjusted to fit the transport data. While the TEM pictures indicated an interfacial boundary which deviated by only one atomic layer, an assumed peak-to-peak deviation of approximately five atomic layers is required to fit the experimental mobility.

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ER -

SURFACE ROUGHNESS SCATTERING AT THE Si-SiO₂ INTERFACE.

Abstract

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