S. M. Goodnick, R. G. Gann, J. R. Sites, David K Ferry, C. W. Wilmsen, D. Fathy, O. L. Krivanek

Research output: Contribution to journalConference articlepeer-review

46 Scopus citations


Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. The authors have studied, on the same sample, high resolution TEM cross sections of the Si-SiO//2 interface and detailed temperature dependent electronic and magnetic transport measurements. The experimental mobility data are compared to a model containing terms for surface roughness and impurity scattering including carrier screening. The statistical properties of the interface fluctuations appear as parameters which are adjusted to fit the transport data. While the TEM pictures indicated an interfacial boundary which deviated by only one atomic layer, an assumed peak-to-peak deviation of approximately five atomic layers is required to fit the experimental mobility.

Original languageEnglish (US)
Pages (from-to)803-808
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - 1983
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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