SURFACE ROUGHNESS SCATTERING AT THE Si-SiO//2 INTERFACE.

Stephen Goodnick, R. G. Gann, J. R. Sites, D. K. Ferry, C. W. Wilmsen, D. Fathy, O. L. Krivanek

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. The authors have studied, on the same sample, high resolution TEM cross sections of the Si-SiO//2 interface and detailed temperature dependent electronic and magnetic transport measurements. The experimental mobility data are compared to a model containing terms for surface roughness and impurity scattering including carrier screening. The statistical properties of the interface fluctuations appear as parameters which are adjusted to fit the transport data. While the TEM pictures indicated an interfacial boundary which deviated by only one atomic layer, an assumed peak-to-peak deviation of approximately five atomic layers is required to fit the experimental mobility.

Original languageEnglish (US)
Pages (from-to)803-808
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number3
DOIs
StatePublished - Jul 1983
Externally publishedYes

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Surface roughness
Scattering
Transmission electron microscopy
Inversion layers
Screening
Impurities
Degradation
Electrons
Temperature
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

SURFACE ROUGHNESS SCATTERING AT THE Si-SiO//2 INTERFACE. / Goodnick, Stephen; Gann, R. G.; Sites, J. R.; Ferry, D. K.; Wilmsen, C. W.; Fathy, D.; Krivanek, O. L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 3, 07.1983, p. 803-808.

Research output: Contribution to journalArticle

Goodnick, Stephen ; Gann, R. G. ; Sites, J. R. ; Ferry, D. K. ; Wilmsen, C. W. ; Fathy, D. ; Krivanek, O. L. / SURFACE ROUGHNESS SCATTERING AT THE Si-SiO//2 INTERFACE. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1983 ; Vol. 1, No. 3. pp. 803-808.
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