Surface roughness of SiO2 from a remote microwave plasma enhanced chemical vapor deposition process

M. J. Rack, Dragica Vasileska, D. K. Ferry, M. Sidorov

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have investigated the roughness of the top surface of silicon dioxide deposited via a remote plasma enhanced chemical vapor deposition (RPECVD) process in a microwave reactor. We find a roughening transition at a deposition temperature of approximately 250°C. Above this temperature, the surface is fairly smooth (root mean square roughness ∼0.3 nm). Below this deposition temperature, the oxide surface becomes extremely rough. Rapid thermal annealing at 900°C does not eliminate this roughness, which is very nonuniform at the nanometer scale. For very thin RPECVD oxide applications, oxide surface roughness could be a limitation. We have used our three-dimensional Poisson solver in order to investigate the effects of oxide surface roughness taken from actual atomic force microscopy measurements on the confining potential within the silicon inversion layer of a metal-oxide-semiconductor (MOS) field effect transistor. In order to assess the quality of our process and system, oxides are characterized electrically with MOS capacitors, and structurally with Fourier transform infrared spectroscopy, high-resolution cross-sectional transmission electron microscopy, and etch rates in HF containing solutions.

Original languageEnglish (US)
Pages (from-to)2165-2170
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number4
StatePublished - Jul 1998

Fingerprint

Plasma enhanced chemical vapor deposition
surface roughness
Surface roughness
Microwaves
vapor deposition
microwaves
Oxides
oxides
roughness
metal oxide semiconductors
Inversion layers
Rapid thermal annealing
MOSFET devices
confining
Temperature
Fourier transform infrared spectroscopy
temperature
Atomic force microscopy
capacitors
Capacitors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Surface roughness of SiO2 from a remote microwave plasma enhanced chemical vapor deposition process. / Rack, M. J.; Vasileska, Dragica; Ferry, D. K.; Sidorov, M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 4, 07.1998, p. 2165-2170.

Research output: Contribution to journalArticle

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