Surface recombination and sulfide passivation of GaN

Engineering & Materials Science

• Sodium sulfide 100%
• Photoluminescence 97%
• Passivation 72%
• Sulfides 69%
• Fermi level 51%
• Schottky barrier diodes 45%
• Capacitance measurement 43%
• Surface states 42%
• Voltage measurement 37%
• Gold 32%
• Etching 32%
• Evaporation 29%
• Oxides 25%
• Metals 19%
• Air 16%
• Temperature 11%

Chemical Compounds

• Surface Recombination 92%
• Chemical Passivation 60%
• Sulfide 47%
• Photoluminescence 30%
• Schottky Barrier 27%
• Surface State 23%
• Fermi Level 23%
• Etching 18%
• Evaporation 17%
• Velocity 16%
• Ammonium 15%
• Sodium Atom 12%
• Ambient Reaction Temperature 11%
• Oxide 10%
• Aqueous Solution 10%
• Metal 8%
• Surface 6%

Physics & Astronomy

• sulfides 63%
• passivity 55%
• inorganic sulfides 41%
• photoluminescence 28%
• Schottky diodes 20%
• electrical measurement 19%
• rooms 18%
• aqueous solutions 18%
• sodium 17%
• capacitance 15%
• gold 15%
• evaporation 15%
• etching 15%
• oxides 12%
• air 11%
• room temperature 11%
• metals 10%