Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

David F. Storm, Thomas O. McConkie, Matthew T. Hardy, D. Scott Katzer, Neeraj Nepal, David J. Meyer, David Smith

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The authors have investigated different methods for preparing the surfaces of freestanding, Ga-polar, hydride vapor-phase epitaxy grown GaN substrates to be used for homoepitaxial GaN growth by plasma-assisted molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy and secondary ion mass spectroscopy, respectively, were used to characterize the microstructure and to measure the concentrations of impurities unintentionally incorporated in the MBE-grown homoepitaxial GaN layers. Heating Ga-polar substrates to ∼1100 °C is as effective as a wet chemical clean for reducing impurity concentrations of oxygen, silicon, and carbon. The combination of an aggressive ex situ wet chemical clean with in situ Ga deposition and thermal desorption results in homoepitaxial GaN layer growth with very low residual impurity concentrations and without generating additional threading dislocations.

Original languageEnglish (US)
Article number02B109
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number2
DOIs
StatePublished - Mar 1 2017

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Molecular beam epitaxy
molecular beam epitaxy
Impurities
Plasmas
impurities
preparation
Substrates
Thermal desorption
Vapor phase epitaxy
Silicon
Hydrides
vapor phase epitaxy
hydrides
mass spectroscopy
Carbon
desorption
Spectroscopy
Ions
Oxygen
Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE. / Storm, David F.; McConkie, Thomas O.; Hardy, Matthew T.; Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.; Smith, David.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, No. 2, 02B109, 01.03.2017.

Research output: Contribution to journalArticle

Storm, David F. ; McConkie, Thomas O. ; Hardy, Matthew T. ; Katzer, D. Scott ; Nepal, Neeraj ; Meyer, David J. ; Smith, David. / Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE. In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2017 ; Vol. 35, No. 2.
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