TY - GEN
T1 - Surface-potential-based compact modeling of BTI
AU - Esqueda, Ivan Sanchez
AU - Barnaby, Hugh
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/9/22
Y1 - 2016/9/22
N2 - Characterization and modeling of bias temperature instability (BTI) is conventionally based on time-dependent shifts in threshold voltage (Vth) resulting from stress and relaxation conditions. Contributions of oxide near-interfacial (i.e., border) and interface traps are not independently captured in these conventional methods. By considering the effects of charge trapping dynamics on MOSFET operation, we present new techniques for characterizing and modeling the contributions of oxide and interface traps. Characterization is based on the rapid response of interface traps to high-frequency measurements of inverse subthreshold slope (S), for which slower oxide traps do not contribute, as their occupancy does not change at high frequencies. The modeling approach uses calculations of surface potential (ψs) to describe the distinct contributions of oxide and interface traps on BTI. Combined with capture/emission time maps, this approach describes BTI-induced ΔS, and Δ Vth stress/recovery characteristics.
AB - Characterization and modeling of bias temperature instability (BTI) is conventionally based on time-dependent shifts in threshold voltage (Vth) resulting from stress and relaxation conditions. Contributions of oxide near-interfacial (i.e., border) and interface traps are not independently captured in these conventional methods. By considering the effects of charge trapping dynamics on MOSFET operation, we present new techniques for characterizing and modeling the contributions of oxide and interface traps. Characterization is based on the rapid response of interface traps to high-frequency measurements of inverse subthreshold slope (S), for which slower oxide traps do not contribute, as their occupancy does not change at high frequencies. The modeling approach uses calculations of surface potential (ψs) to describe the distinct contributions of oxide and interface traps on BTI. Combined with capture/emission time maps, this approach describes BTI-induced ΔS, and Δ Vth stress/recovery characteristics.
KW - Aging effects
KW - MOSFET
KW - bias temperature instability (BTI)
KW - modeling
KW - surface potential
UR - http://www.scopus.com/inward/record.url?scp=84990987743&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84990987743&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2016.7574648
DO - 10.1109/IRPS.2016.7574648
M3 - Conference contribution
AN - SCOPUS:84990987743
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - XT061-XT066
BT - 2016 International Reliability Physics Symposium, IRPS 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 International Reliability Physics Symposium, IRPS 2016
Y2 - 17 April 2016 through 21 April 2016
ER -