Surface Photovoltage Measurement of Perovskite Solar Cells to Screen Carrier Selective Contacts

Shalinee Kavadiya, Arthur Onno, Caleb Boyd, Zhengshan Yu, Michael McGehee, Zachary C. Holman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SPV measurement through the Kelvin probe method is described. Silicon heterojunction structures show the maximum SPV of 700 V. Measurement on perovskite structures, and the results suggest adding BCP with C60 enhances the selectivity of C60 electron contact. Furthermore, PTAA and PTAA/PFN have similar selectivity but NiOx is poorly selective. SPV is an easy way to provide a relative comparison between various cell structures and contact layers to determine the relative extractable V_{oc} and properties of the contact layer (selectivity, passivation) limiting the efficiency.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1439-1440
Number of pages2
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • Kelvin probe method
  • Surface photovoltage
  • carrier selective contacts
  • perovskite solar cells
  • silicon solar cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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