Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiN x stack with <1 cm/s effective surface recombination velocity

Stanislau Herasimenka, Clarence J. Tracy, Vivek Sharma, Natasa Vulic, William J. Dauksher, Stuart Bowden

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The passivation quality of an a-Si/SiO2/SiNx (aSON) stack deposited by conventional PECVD at <250°C with and without additional corona charging of SiNx is presented. <2 fA/cm 2 surface dark saturation current density and <1 cm/s effective surface recombination velocity were demonstrated on both planar and textured n-type Czochralski (CZ) substrates. It was shown that very good passivation can be achieved using <5 nm a-Si layers to provide low parasitic absorption. We also report effective minority carrier lifetimes >60 ms on 5000 ω-cm and 20.9 ms on 1.7 ω-cm mirror polished float zone (FZ) material passivated with aSON stacks.

Original languageEnglish (US)
Article number183903
JournalApplied Physics Letters
Volume103
Issue number18
DOIs
StatePublished - Oct 28 2013

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passivity
wafers
float zones
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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiN x stack with <1 cm/s effective surface recombination velocity. / Herasimenka, Stanislau; Tracy, Clarence J.; Sharma, Vivek; Vulic, Natasa; Dauksher, William J.; Bowden, Stuart.

In: Applied Physics Letters, Vol. 103, No. 18, 183903, 28.10.2013.

Research output: Contribution to journalArticle

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AU - Dauksher, William J.

AU - Bowden, Stuart

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