Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

Jianping Liu, Jae Hyun Ryou, Zachary Lochner, Jae Limb, Dongwon Yoo, Russell D. Dupuis, Zhihao Wu, Alec M. Fischer, Fernando Ponce

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The growth of green LEDs with InxGa1-xN:Mg p-type layers was studied by employing various epitaxial structures and substrates to control the surface morphology, especially in terms of the formation of pits. The pit densities of the green LED structures grown on sapphire substrates with p-type layers composed of a p-In0.04Ga0.96N:Mg and a graded p-InxGa1-xN:Mg are ∼1×109 and ∼3×108 cm-2, respectively. p-type layers composed of p-InGaN:Mg/p-GaN:Mg short-period superlattices are effective in preventing the formation of V-defect related pits. The pit density of green LED structures grown on free-standing GaN substrates with a p-In0.04Ga0.96N:Mg layer is ∼1.4×107 cm-2, which can be correlated to the threading dislocation density in the substrates.

Original languageEnglish (US)
Pages (from-to)5166-5169
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
StatePublished - Nov 15 2008

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Surface morphology
Light emitting diodes
light emitting diodes
Substrates
Aluminum Oxide
Superlattices
Sapphire
superlattices
sapphire
Defects
defects

Keywords

  • A1. Crystal morphology
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting III-V materials
  • B3. Light-emitting diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition. / Liu, Jianping; Ryou, Jae Hyun; Lochner, Zachary; Limb, Jae; Yoo, Dongwon; Dupuis, Russell D.; Wu, Zhihao; Fischer, Alec M.; Ponce, Fernando.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 5166-5169.

Research output: Contribution to journalArticle

Liu, Jianping ; Ryou, Jae Hyun ; Lochner, Zachary ; Limb, Jae ; Yoo, Dongwon ; Dupuis, Russell D. ; Wu, Zhihao ; Fischer, Alec M. ; Ponce, Fernando. / Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 5166-5169.
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abstract = "The growth of green LEDs with InxGa1-xN:Mg p-type layers was studied by employing various epitaxial structures and substrates to control the surface morphology, especially in terms of the formation of pits. The pit densities of the green LED structures grown on sapphire substrates with p-type layers composed of a p-In0.04Ga0.96N:Mg and a graded p-InxGa1-xN:Mg are ∼1×109 and ∼3×108 cm-2, respectively. p-type layers composed of p-InGaN:Mg/p-GaN:Mg short-period superlattices are effective in preventing the formation of V-defect related pits. The pit density of green LED structures grown on free-standing GaN substrates with a p-In0.04Ga0.96N:Mg layer is ∼1.4×107 cm-2, which can be correlated to the threading dislocation density in the substrates.",
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AU - Yoo, Dongwon

AU - Dupuis, Russell D.

AU - Wu, Zhihao

AU - Fischer, Alec M.

AU - Ponce, Fernando

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N2 - The growth of green LEDs with InxGa1-xN:Mg p-type layers was studied by employing various epitaxial structures and substrates to control the surface morphology, especially in terms of the formation of pits. The pit densities of the green LED structures grown on sapphire substrates with p-type layers composed of a p-In0.04Ga0.96N:Mg and a graded p-InxGa1-xN:Mg are ∼1×109 and ∼3×108 cm-2, respectively. p-type layers composed of p-InGaN:Mg/p-GaN:Mg short-period superlattices are effective in preventing the formation of V-defect related pits. The pit density of green LED structures grown on free-standing GaN substrates with a p-In0.04Ga0.96N:Mg layer is ∼1.4×107 cm-2, which can be correlated to the threading dislocation density in the substrates.

AB - The growth of green LEDs with InxGa1-xN:Mg p-type layers was studied by employing various epitaxial structures and substrates to control the surface morphology, especially in terms of the formation of pits. The pit densities of the green LED structures grown on sapphire substrates with p-type layers composed of a p-In0.04Ga0.96N:Mg and a graded p-InxGa1-xN:Mg are ∼1×109 and ∼3×108 cm-2, respectively. p-type layers composed of p-InGaN:Mg/p-GaN:Mg short-period superlattices are effective in preventing the formation of V-defect related pits. The pit density of green LED structures grown on free-standing GaN substrates with a p-In0.04Ga0.96N:Mg layer is ∼1.4×107 cm-2, which can be correlated to the threading dislocation density in the substrates.

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