Surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor with 14:1 continuous tuning range

Chuang Yuan Lee; Wei Pang; Shih Jui Chen; Derrick Chi; Hongyu Yu; Eun Sok Kim

doi:10.1063/1.2838447

Surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor with 14:1 continuous tuning range

Chuang Yuan Lee, Wei Pang, Shih Jui Chen, Derrick Chi, Hongyu Yu, Eun Sok Kim

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This letter reports a surface micromachined, complementary-metal-oxide- semiconductor compatible tunable capacitor utilizing a simply supported bridge structure, unlike traditional microelectromechanical-system bridges that use fully clamped boundary condition at the anchors. Through the implementation of a simply supported bridge driven by two 100-μm -long ZnO-actuated cantilevers, a compact tunable capacitor has been fabricated on silicon without any warping and shown to be capable of a 1400% continuous tuning from 0.13 to 1.82 pF.

Original language	English (US)
Article number	044103
Journal	Applied Physics Letters
Volume	92
Issue number	4
DOIs	https://doi.org/10.1063/1.2838447
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2838447

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abstract = "This letter reports a surface micromachined, complementary-metal-oxide- semiconductor compatible tunable capacitor utilizing a simply supported bridge structure, unlike traditional microelectromechanical-system bridges that use fully clamped boundary condition at the anchors. Through the implementation of a simply supported bridge driven by two 100-μm -long ZnO-actuated cantilevers, a compact tunable capacitor has been fabricated on silicon without any warping and shown to be capable of a 1400% continuous tuning from 0.13 to 1.82 pF.",

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AU - Chi, Derrick

AU - Yu, Hongyu

AU - Kim, Eun Sok

PY - 2008

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AB - This letter reports a surface micromachined, complementary-metal-oxide- semiconductor compatible tunable capacitor utilizing a simply supported bridge structure, unlike traditional microelectromechanical-system bridges that use fully clamped boundary condition at the anchors. Through the implementation of a simply supported bridge driven by two 100-μm -long ZnO-actuated cantilevers, a compact tunable capacitor has been fabricated on silicon without any warping and shown to be capable of a 1400% continuous tuning from 0.13 to 1.82 pF.

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Surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor with 14:1 continuous tuning range

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