Surface electronic states of low-temperature H-plasma cleaned Si(100)

Jaewon Cho, T. P. Schneider, J. VanderWeide, Hyeongtag Jeon, Robert Nemanich

Research output: Contribution to journalArticle

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Abstract

The surface of low-temperature H-plasma cleaned Si(100) was studied by angle-resolved UV photoemission spectroscopy. The cleaning process involved an ex situ wet chemical preclean followed by an in situ H-plasma exposure at a substrate temperature of 300 °C. After the in situ H-plasma exposure, a 2×1 ordered surface was obtained which exhibited two hydrogen-induced surface states/resonances in the UV photoemission spectra. The temperature dependence of the spectra showed that the Si-H monohydride started to dissociate at a temperature below 500 °C, and the dangling-bond surface states were identified. The spectroscopic properties of the low-temperature H-plasma surface were essentially identical to surfaces prepared by ultrahigh vacuum high-temperature annealing followed by H passivation.

Original languageEnglish (US)
Pages (from-to)1995-1997
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number16
DOIs
StatePublished - 1991
Externally publishedYes

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electronics
photoelectric emission
cleaning
ultrahigh vacuum
passivity
temperature dependence
annealing
temperature
hydrogen
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Surface electronic states of low-temperature H-plasma cleaned Si(100). / Cho, Jaewon; Schneider, T. P.; VanderWeide, J.; Jeon, Hyeongtag; Nemanich, Robert.

In: Applied Physics Letters, Vol. 59, No. 16, 1991, p. 1995-1997.

Research output: Contribution to journalArticle

Cho, Jaewon ; Schneider, T. P. ; VanderWeide, J. ; Jeon, Hyeongtag ; Nemanich, Robert. / Surface electronic states of low-temperature H-plasma cleaned Si(100). In: Applied Physics Letters. 1991 ; Vol. 59, No. 16. pp. 1995-1997.
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