Surface electronic states and stability of the H-terminated Si(100) 1×1 surface produced by low-temperature H-plasma exposure

Jaewon Cho, Robert Nemanich

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electronic states and surface structure of H-terminated Si(100) produced by low-temperature (≤150°C) H-plasma exposure was studied by angle-resolved ultraviolet photoemission spectroscopy (ARUPS). After H-plasma exposure at 100°C and 150°C, the surface exhibited a 1×1 low-energy-electron-diffraction (LEED) pattern. The ARUPS spectrum of the 1×1 H-terminated phase showed a broad feature at ∼6 eV below EF, and its angle dependence exhibited a nondispersive character. This feature was attributed to electronic states of the dihydride bonding configuration. The surface/resonance states of the Si-Si dimer bond were also identified in the ARUPS spectra, and the relative amount of monohydride structures was correlated with this feature. Surfaces prepared at 100°C and 150°C exhibited different relative amounts of monohydride and dihydride surface configurations. As the surface was annealed to 400°C the LEED transformed to a 2×1 structure, and the transition from predominantly dihydride configurations to monohydride bonding was identified. The monohydride Si-H surface bond was stable up to 460°C, and the dangling-bond surface states were identified after annealing at 500°C.

Original languageEnglish (US)
Pages (from-to)15212-15217
Number of pages6
JournalPhysical Review B
Volume46
Issue number23
DOIs
StatePublished - 1992
Externally publishedYes

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Electronic states
Plasmas
Photoelectron spectroscopy
Ultraviolet spectroscopy
electronics
dihydrides
Low energy electron diffraction
Temperature
photoelectric emission
Dangling bonds
electron diffraction
configurations
Surface states
spectroscopy
Surface structure
Dimers
Diffraction patterns
Annealing
diffraction patterns
dimers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Surface electronic states and stability of the H-terminated Si(100) 1×1 surface produced by low-temperature H-plasma exposure. / Cho, Jaewon; Nemanich, Robert.

In: Physical Review B, Vol. 46, No. 23, 1992, p. 15212-15217.

Research output: Contribution to journalArticle

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abstract = "The electronic states and surface structure of H-terminated Si(100) produced by low-temperature (≤150°C) H-plasma exposure was studied by angle-resolved ultraviolet photoemission spectroscopy (ARUPS). After H-plasma exposure at 100°C and 150°C, the surface exhibited a 1×1 low-energy-electron-diffraction (LEED) pattern. The ARUPS spectrum of the 1×1 H-terminated phase showed a broad feature at ∼6 eV below EF, and its angle dependence exhibited a nondispersive character. This feature was attributed to electronic states of the dihydride bonding configuration. The surface/resonance states of the Si-Si dimer bond were also identified in the ARUPS spectra, and the relative amount of monohydride structures was correlated with this feature. Surfaces prepared at 100°C and 150°C exhibited different relative amounts of monohydride and dihydride surface configurations. As the surface was annealed to 400°C the LEED transformed to a 2×1 structure, and the transition from predominantly dihydride configurations to monohydride bonding was identified. The monohydride Si-H surface bond was stable up to 460°C, and the dangling-bond surface states were identified after annealing at 500°C.",
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