Abstract
The electronic states and surface structure of H-terminated Si(100) produced by low-temperature (≤150°C) H-plasma exposure was studied by angle-resolved ultraviolet photoemission spectroscopy (ARUPS). After H-plasma exposure at 100°C and 150°C, the surface exhibited a 1×1 low-energy-electron-diffraction (LEED) pattern. The ARUPS spectrum of the 1×1 H-terminated phase showed a broad feature at ∼6 eV below EF, and its angle dependence exhibited a nondispersive character. This feature was attributed to electronic states of the dihydride bonding configuration. The surface/resonance states of the Si-Si dimer bond were also identified in the ARUPS spectra, and the relative amount of monohydride structures was correlated with this feature. Surfaces prepared at 100°C and 150°C exhibited different relative amounts of monohydride and dihydride surface configurations. As the surface was annealed to 400°C the LEED transformed to a 2×1 structure, and the transition from predominantly dihydride configurations to monohydride bonding was identified. The monohydride Si-H surface bond was stable up to 460°C, and the dangling-bond surface states were identified after annealing at 500°C.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 15212-15217 |
| Number of pages | 6 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 23 |
| DOIs | |
| State | Published - 1992 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Surface electronic states and stability of the H-terminated Si(100) 1×1 surface produced by low-temperature H-plasma exposure. / Cho, Jaewon; Nemanich, Robert.
In: Physical Review B, Vol. 46, No. 23, 1992, p. 15212-15217.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface electronic states and stability of the H-terminated Si(100) 1×1 surface produced by low-temperature H-plasma exposure
AU - Cho, Jaewon
AU - Nemanich, Robert
PY - 1992
Y1 - 1992
N2 - The electronic states and surface structure of H-terminated Si(100) produced by low-temperature (≤150°C) H-plasma exposure was studied by angle-resolved ultraviolet photoemission spectroscopy (ARUPS). After H-plasma exposure at 100°C and 150°C, the surface exhibited a 1×1 low-energy-electron-diffraction (LEED) pattern. The ARUPS spectrum of the 1×1 H-terminated phase showed a broad feature at ∼6 eV below EF, and its angle dependence exhibited a nondispersive character. This feature was attributed to electronic states of the dihydride bonding configuration. The surface/resonance states of the Si-Si dimer bond were also identified in the ARUPS spectra, and the relative amount of monohydride structures was correlated with this feature. Surfaces prepared at 100°C and 150°C exhibited different relative amounts of monohydride and dihydride surface configurations. As the surface was annealed to 400°C the LEED transformed to a 2×1 structure, and the transition from predominantly dihydride configurations to monohydride bonding was identified. The monohydride Si-H surface bond was stable up to 460°C, and the dangling-bond surface states were identified after annealing at 500°C.
AB - The electronic states and surface structure of H-terminated Si(100) produced by low-temperature (≤150°C) H-plasma exposure was studied by angle-resolved ultraviolet photoemission spectroscopy (ARUPS). After H-plasma exposure at 100°C and 150°C, the surface exhibited a 1×1 low-energy-electron-diffraction (LEED) pattern. The ARUPS spectrum of the 1×1 H-terminated phase showed a broad feature at ∼6 eV below EF, and its angle dependence exhibited a nondispersive character. This feature was attributed to electronic states of the dihydride bonding configuration. The surface/resonance states of the Si-Si dimer bond were also identified in the ARUPS spectra, and the relative amount of monohydride structures was correlated with this feature. Surfaces prepared at 100°C and 150°C exhibited different relative amounts of monohydride and dihydride surface configurations. As the surface was annealed to 400°C the LEED transformed to a 2×1 structure, and the transition from predominantly dihydride configurations to monohydride bonding was identified. The monohydride Si-H surface bond was stable up to 460°C, and the dangling-bond surface states were identified after annealing at 500°C.
UR - http://www.scopus.com/inward/record.url?scp=35949005776&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=35949005776&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.46.15212
DO - 10.1103/PhysRevB.46.15212
M3 - Article
AN - SCOPUS:35949005776
VL - 46
SP - 15212
EP - 15217
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 23
ER -