Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution

Veronica Burrows, V. S G Kondapuram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The interaction of semiconductor surfaces with aqueous acid solutions is important in chemical cleaning and etching. Wet chemical treatments are advantageous because they cause little damage to the surface and do not usually require high temperatures. The surface chemistry of GaAs after treatment with phosphoric acid was studied using multiple internal reflection infrared spectroscopy. The treatment left behind a thin film containing several types of PxOy bonds. The chemical nature of the film was observed to change with time as new species would form on the surface.

Original languageEnglish (US)
Title of host publicationChemical Perspectives of Microelectronic Materials III
PublisherPubl by Materials Research Society
Pages117-121
Number of pages5
ISBN (Print)1558991778
StatePublished - Jan 1 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume282
ISSN (Print)0272-9172

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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