Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution

Veronica Burrows, V. S G Kondapuram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The interaction of semiconductor surfaces with aqueous acid solutions is important in chemical cleaning and etching. Wet chemical treatments are advantageous because they cause little damage to the surface and do not usually require high temperatures. The surface chemistry of GaAs after treatment with phosphoric acid was studied using multiple internal reflection infrared spectroscopy. The treatment left behind a thin film containing several types of PxOy bonds. The chemical nature of the film was observed to change with time as new species would form on the surface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages117-121
Number of pages5
Volume282
ISBN (Print)1558991778
StatePublished - 1993
EventProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA
Duration: Nov 30 1992Dec 3 1992

Other

OtherProceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
CityBoston, MA, USA
Period11/30/9212/3/92

Fingerprint

Surface chemistry
Chemical cleaning
Beam plasma interactions
Phosphoric acid
Infrared spectroscopy
Etching
Semiconductor materials
Thin films
Acids
gallium arsenide
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Burrows, V., & Kondapuram, V. S. G. (1993). Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution. In Materials Research Society Symposium Proceedings (Vol. 282, pp. 117-121). Pittsburgh, PA, United States: Publ by Materials Research Society.

Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution. / Burrows, Veronica; Kondapuram, V. S G.

Materials Research Society Symposium Proceedings. Vol. 282 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 117-121.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Burrows, V & Kondapuram, VSG 1993, Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution. in Materials Research Society Symposium Proceedings. vol. 282, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 117-121, Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Boston, MA, USA, 11/30/92.
Burrows V, Kondapuram VSG. Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution. In Materials Research Society Symposium Proceedings. Vol. 282. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 117-121
Burrows, Veronica ; Kondapuram, V. S G. / Surface chemistry of GaAs(100) after treatment with aqueous H3PO4 solution. Materials Research Society Symposium Proceedings. Vol. 282 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 117-121
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