Surface characterization of quinhydrone-methanol and iodine-methanol passivated silicon substrates using X-ray photoelectron spectroscopy

Bhumika Chhabra, Conan Weiland, Robert L. Opila, Christiana Honsberg

Research output: Contribution to journalArticle

12 Scopus citations


Hydrogen-terminated silicon substrates were passivated with quinhydrone-methanol (QHY/ME) and iodine-methanol (I 2/ME), and the chemical changes occurring at the surface were investigated using X-ray photoelectron spectroscopy (XPS). The XPS surface studies demonstrate that QHY/ME passivation provides reduced oxidation, less carbon contamination, and a chemically inert surface. Electrical characterization also demonstrates higher minority carrier lifetimes of QHY/ME passivated substrates as compared to I 2/ME passivated substrates. The quality of surface treatment was also characterized using the contact angle measurement, which confirms the presence of a hydrophobic organic layer on the surface after QHY/ME passivation. Si 2p XPS spectra of the QHY/ME, I 2/ME samples, and H-terminated silicon. With a peak at 102.9 eV for I 2/ME, it is evident that it provides poor surface passivation than QHY/ME where no surface oxidation is observed.

Original languageEnglish (US)
Pages (from-to)86-90
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
StatePublished - Jan 1 2011



  • X-ray photoelectron spectroscopy
  • iodine
  • minority carrier lifetime
  • passivation
  • quinhydrone
  • silicon
  • surfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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