Surface and interface morphology of small islands of TiSi2 and ZrSi2 on (001) silicon

B. L. Kropman; C. A. Sukow; R. J. Nemanich

Surface and interface morphology of small islands of TiSi₂ and ZrSi₂ on (001) silicon

B. L. Kropman, C. A. Sukow, R. J. Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The morphology of small islands of TiSi₂ and ZrSi₂ on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3-50 Angstrom) followed by an anneal at high temperatures (700-1200°C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi₂ is stable for layers as thin as 8 Angstrom, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si directions is given in terms of interplanar lattice spacings.

Original language	English (US)
Title of host publication	Evolution of Surface and Thin Film Microstructure
Editors	Harry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
Publisher	Publ by Materials Research Society
Pages	589-592
Number of pages	4
ISBN (Print)	1558991751
State	Published - Dec 1 1993
Externally published	Yes
Event	Proceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: Nov 30 1992 → Dec 4 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	280
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1992 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	11/30/92 → 12/4/92

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Kropman, B. L., Sukow, C. A., & Nemanich, R. J. (1993). Surface and interface morphology of small islands of TiSi₂ and ZrSi₂ on (001) silicon. In H. A. Atwater, E. Chason, M. H. Grabow, & M. G. Lagally (Eds.), Evolution of Surface and Thin Film Microstructure (pp. 589-592). (Materials Research Society Symposium Proceedings; Vol. 280). Publ by Materials Research Society.

Surface and interface morphology of small islands of TiSi₂ and ZrSi₂ on (001) silicon. / Kropman, B. L.; Sukow, C. A.; Nemanich, R. J.

Evolution of Surface and Thin Film Microstructure. ed. / Harry A. Atwater; Eric Chason; Marcia H. Grabow; Max G. Lagally. Publ by Materials Research Society, 1993. p. 589-592 (Materials Research Society Symposium Proceedings; Vol. 280).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kropman, BL, Sukow, CA & Nemanich, RJ 1993, Surface and interface morphology of small islands of TiSi₂ and ZrSi₂ on (001) silicon. in HA Atwater, E Chason, MH Grabow & MG Lagally (eds), Evolution of Surface and Thin Film Microstructure. Materials Research Society Symposium Proceedings, vol. 280, Publ by Materials Research Society, pp. 589-592, Proceedings of the 1992 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/30/92.

Kropman, B. L. ; Sukow, C. A. ; Nemanich, R. J. / Surface and interface morphology of small islands of TiSi₂ and ZrSi₂ on (001) silicon. Evolution of Surface and Thin Film Microstructure. editor / Harry A. Atwater ; Eric Chason ; Marcia H. Grabow ; Max G. Lagally. Publ by Materials Research Society, 1993. pp. 589-592 (Materials Research Society Symposium Proceedings).

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title = "Surface and interface morphology of small islands of TiSi2 and ZrSi2 on (001) silicon",

abstract = "The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3-50 Angstrom) followed by an anneal at high temperatures (700-1200°C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8 Angstrom, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si directions is given in terms of interplanar lattice spacings.",

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N2 - The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3-50 Angstrom) followed by an anneal at high temperatures (700-1200°C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8 Angstrom, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si directions is given in terms of interplanar lattice spacings.

AB - The morphology of small islands of TiSi2 and ZrSi2 on Si(100) is investigated and compared to larger islands in terms of a solid state capillarity model. The silicide islands are formed by deposition of very thin layers of titanium and zirconium (3-50 Angstrom) followed by an anneal at high temperatures (700-1200°C). SEM and cross-sectional HRTEM are used to study respectively the surface and interface morphology. It is found that the C49-phase for TiSi2 is stable for layers as thin as 8 Angstrom, and annealing temperatures as high as 1200°C. An explanation for the fact that the formed islands align parallel to the Si directions is given in terms of interplanar lattice spacings.

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