Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices

P. M W Skovgaard, J. G. McInerney, J. V. Moloney, R. A. Indik, Cun-Zheng Ning, A. Egan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Detailed theoretical analyses of monolithically integrated flared amplifier master oscillator power amplifiers (MFA-MOPAs) are presented. The field amplitudes and the carrier density are calculated using effective Block equations. The obtained features of the MFA-MOPAs are presented and discussed.

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Skovgaard, P. M. W., McInerney, J. G., Moloney, J. V., Indik, R. A., Ning, C-Z., & Egan, A. (1998). Suppression of transverse and longitudinal instabilities in high-power MFA-MOPA semiconductor devices. In Anon (Ed.), Conference on Lasers and Electro-Optics Europe - Technical Digest (pp. 244). Piscataway, NJ, United States: IEEE.