Suppression of silicon (001) surface reactivity using a valence-mending technique

Meng Tao, Janadass Shanmugam, Michael Coviello, Wiley P. Kirk

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100°C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.

Original languageEnglish (US)
Pages (from-to)89-92
Number of pages4
JournalSolid State Communications
Volume132
Issue number2
DOIs
StatePublished - Oct 1 2004
Externally publishedYes

Keywords

  • A. Silicon
  • D. Dangling bond
  • D. Surface passivation
  • D. Surface reactivity

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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