Suppression of silicon (001) surface reactivity using a valence-mending technique

Meng Tao, Janadass Shanmugam, Michael Coviello, Wiley P. Kirk

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100°C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.

Original languageEnglish (US)
Pages (from-to)89-92
Number of pages4
JournalSolid State Communications
Volume132
Issue number2
DOIs
StatePublished - Oct 2004
Externally publishedYes

Fingerprint

Silicon
reactivity
retarding
valence
Chemical reactivity
Dangling bonds
Selenium
silicon
Photoelectron spectroscopy
selenium
Titanium
Nickel
stopping
Passivation
x ray spectroscopy
passivity
titanium
photoelectron spectroscopy
nickel
Transmission electron microscopy

Keywords

  • A. Silicon
  • D. Dangling bond
  • D. Surface passivation
  • D. Surface reactivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Suppression of silicon (001) surface reactivity using a valence-mending technique. / Tao, Meng; Shanmugam, Janadass; Coviello, Michael; Kirk, Wiley P.

In: Solid State Communications, Vol. 132, No. 2, 10.2004, p. 89-92.

Research output: Contribution to journalArticle

Tao, Meng ; Shanmugam, Janadass ; Coviello, Michael ; Kirk, Wiley P. / Suppression of silicon (001) surface reactivity using a valence-mending technique. In: Solid State Communications. 2004 ; Vol. 132, No. 2. pp. 89-92.
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