Suppression of silicon (001) surface reactivity using a valence-mending technique

Meng Tao; Janadass Shanmugam; Michael Coviello; Wiley P. Kirk

doi:10.1016/j.ssc.2004.07.031

Suppression of silicon (001) surface reactivity using a valence-mending technique

Meng Tao, Janadass Shanmugam, Michael Coviello, Wiley P. Kirk

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100°C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni₂Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.

Original language	English (US)
Pages (from-to)	89-92
Number of pages	4
Journal	Solid State Communications
Volume	132
Issue number	2
DOIs	https://doi.org/10.1016/j.ssc.2004.07.031
State	Published - Oct 2004
Externally published	Yes

Keywords

A. Silicon
D. Dangling bond
D. Surface passivation
D. Surface reactivity

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2004.07.031

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title = "Suppression of silicon (001) surface reactivity using a valence-mending technique",

abstract = "It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100°C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.",

keywords = "A. Silicon, D. Dangling bond, D. Surface passivation, D. Surface reactivity",

author = "Meng Tao and Janadass Shanmugam and Michael Coviello and Kirk, {Wiley P.}",

note = "Funding Information: This research is supported by National Science Foundation (Grant No. ECS-0322762-2003) and Semiconductor Research Corporation (Grant No. 2002-RJ-1054G). M. Tao would like to thank Prof. R. M. Wallace for assistance with XPS and Prof. J. W. Lyding and Dr. R. T. Haasch for discussions.",

year = "2004",

month = oct,

doi = "10.1016/j.ssc.2004.07.031",

language = "English (US)",

volume = "132",

pages = "89--92",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "2",

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T1 - Suppression of silicon (001) surface reactivity using a valence-mending technique

AU - Tao, Meng

AU - Shanmugam, Janadass

AU - Coviello, Michael

AU - Kirk, Wiley P.

N1 - Funding Information: This research is supported by National Science Foundation (Grant No. ECS-0322762-2003) and Semiconductor Research Corporation (Grant No. 2002-RJ-1054G). M. Tao would like to thank Prof. R. M. Wallace for assistance with XPS and Prof. J. W. Lyding and Dr. R. T. Haasch for discussions.

PY - 2004/10

Y1 - 2004/10

N2 - It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100°C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.

AB - It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100°C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.

KW - A. Silicon

KW - D. Dangling bond

KW - D. Surface passivation

KW - D. Surface reactivity

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U2 - 10.1016/j.ssc.2004.07.031

DO - 10.1016/j.ssc.2004.07.031

M3 - Article

AN - SCOPUS:4344564862

SN - 0038-1098

VL - 132

SP - 89

EP - 92

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Suppression of silicon (001) surface reactivity using a valence-mending technique

Abstract

Keywords

ASJC Scopus subject areas

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