Suppression of quantum interference induced vortices and threshold voltage shift due to the inclusion of inelastic scattering in ultra small fully depleted SOI MOSFETs

M. J. Gilbert, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ever shrinking dimensions of semiconductor device technology have placed great importance on quantum interference effects. More interest is focusing upon fully depleted SOI MOSFET, where we find many interesting effects. In this paper, we examine the effect of scattering on the turbulent flow of the electron density in SOI MOSFET devices. Futher, we also investigate this effect on the threshold voltage of these ultra small devices. We find that the inclusion of scattering suppresses the vortices that form in the active regions of the device creating a more disordered flow and shifting the threshold voltage to higher levels that previously observed.

Original languageEnglish (US)
Title of host publication2004 4th IEEE Conference on Nanotechnology
Pages331-333
Number of pages3
StatePublished - 2004
Event2004 4th IEEE Conference on Nanotechnology - Munich, Germany
Duration: Aug 16 2004Aug 19 2004

Other

Other2004 4th IEEE Conference on Nanotechnology
CountryGermany
CityMunich
Period8/16/048/19/04

Fingerprint

Inelastic scattering
Threshold voltage
Vortex flow
Scattering
MOSFET devices
Semiconductor devices
Turbulent flow
Carrier concentration

Keywords

  • 3d simulation
  • Interference
  • MOSFET
  • Quantum effects
  • Silicon on insulator

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Suppression of quantum interference induced vortices and threshold voltage shift due to the inclusion of inelastic scattering in ultra small fully depleted SOI MOSFETs. / Gilbert, M. J.; Ferry, D. K.

2004 4th IEEE Conference on Nanotechnology. 2004. p. 331-333.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gilbert, MJ & Ferry, DK 2004, Suppression of quantum interference induced vortices and threshold voltage shift due to the inclusion of inelastic scattering in ultra small fully depleted SOI MOSFETs. in 2004 4th IEEE Conference on Nanotechnology. pp. 331-333, 2004 4th IEEE Conference on Nanotechnology, Munich, Germany, 8/16/04.
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