Suppression of high-resistance phases of Ni silicide by Se passivation of Si(100)

Janadass Shanmugam; Jinggang Zhu; Yuqing Xu; Wiley P. Kirk; Meng Tao

doi:10.1109/TED.2006.870569

Suppression of high-resistance phases of Ni silicide by Se passivation of Si(100)

Janadass Shanmugam, Jinggang Zhu, Yuqing Xu, Wiley P. Kirk, Meng Tao

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

High-resistance phases of Ni-rich Ni silicide are formed on Si(100) below 400 °C, while high-resistance phases of Si-rich Ni silicide are formed above 600 °C. The desired low-resistance NiSi is formed between 400 °C and 600 °C. In this paper, the authors report the suppression of high-resistance phases of Ni silicide by passivating the Si(100) surface with a monolayer of Se. A 500-̊A Ni on n-type low 10¹⁵ cm^-3 doped Si(100) wafers, passivated with Se, shows a sheet resistance of ∼ 2.55 Ω/square upon annealing between 200 °C and 500 °C, while the sheet resistance of the 500-̊A Ni on identical wafers without Se-passivation jumps to ∼ 7.92 Ω/square between 300 °C and 350 °C. Between 600 °C and 700 °C, the sheet resistance of the Se-passivated samples is ∼ 10% lower than that of the control samples. Transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy all confirm that the suppression of high-resistance Ni silicides below 500 °C is attributed to the suppression of silicidation and above 600 °C to the delay in Si-rich Ni silicide formation at the Ni/Se-passivated Si(100) interface.

Original language	English (US)
Pages (from-to)	719-723
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	4
DOIs	https://doi.org/10.1109/TED.2006.870569
State	Published - Apr 2006
Externally published	Yes

Keywords

Integrated circuit metallization
MOSFETs
Nickel compounds
Semiconductor-metal interfaces
Surface treatment

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2006.870569

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@article{1db14b33627c44dabc8058767b5242be,

title = "Suppression of high-resistance phases of Ni silicide by Se passivation of Si(100)",

abstract = "High-resistance phases of Ni-rich Ni silicide are formed on Si(100) below 400 °C, while high-resistance phases of Si-rich Ni silicide are formed above 600 °C. The desired low-resistance NiSi is formed between 400 °C and 600 °C. In this paper, the authors report the suppression of high-resistance phases of Ni silicide by passivating the Si(100) surface with a monolayer of Se. A 500-̊A Ni on n-type low 1015 cm-3 doped Si(100) wafers, passivated with Se, shows a sheet resistance of ∼ 2.55 Ω/square upon annealing between 200 °C and 500 °C, while the sheet resistance of the 500-̊A Ni on identical wafers without Se-passivation jumps to ∼ 7.92 Ω/square between 300 °C and 350 °C. Between 600 °C and 700 °C, the sheet resistance of the Se-passivated samples is ∼ 10% lower than that of the control samples. Transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy all confirm that the suppression of high-resistance Ni silicides below 500 °C is attributed to the suppression of silicidation and above 600 °C to the delay in Si-rich Ni silicide formation at the Ni/Se-passivated Si(100) interface.",

keywords = "Integrated circuit metallization, MOSFETs, Nickel compounds, Semiconductor-metal interfaces, Surface treatment",

author = "Janadass Shanmugam and Jinggang Zhu and Yuqing Xu and Kirk, {Wiley P.} and Meng Tao",

note = "Funding Information: Manuscript received May 31, 2005; revised January 13, 2006. This work was supported by the National Science Foundation under Grant ECS-0322762 and Texas Advanced Technology Program Grant 003656-0096. The review of this paper was arranged by Editor R. Shrivastava.",

year = "2006",

month = apr,

doi = "10.1109/TED.2006.870569",

language = "English (US)",

volume = "53",

pages = "719--723",

journal = "IEEE Transactions on Electron Devices",

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T1 - Suppression of high-resistance phases of Ni silicide by Se passivation of Si(100)

AU - Shanmugam, Janadass

AU - Zhu, Jinggang

AU - Xu, Yuqing

AU - Kirk, Wiley P.

AU - Tao, Meng

N1 - Funding Information: Manuscript received May 31, 2005; revised January 13, 2006. This work was supported by the National Science Foundation under Grant ECS-0322762 and Texas Advanced Technology Program Grant 003656-0096. The review of this paper was arranged by Editor R. Shrivastava.

PY - 2006/4

Y1 - 2006/4

N2 - High-resistance phases of Ni-rich Ni silicide are formed on Si(100) below 400 °C, while high-resistance phases of Si-rich Ni silicide are formed above 600 °C. The desired low-resistance NiSi is formed between 400 °C and 600 °C. In this paper, the authors report the suppression of high-resistance phases of Ni silicide by passivating the Si(100) surface with a monolayer of Se. A 500-̊A Ni on n-type low 1015 cm-3 doped Si(100) wafers, passivated with Se, shows a sheet resistance of ∼ 2.55 Ω/square upon annealing between 200 °C and 500 °C, while the sheet resistance of the 500-̊A Ni on identical wafers without Se-passivation jumps to ∼ 7.92 Ω/square between 300 °C and 350 °C. Between 600 °C and 700 °C, the sheet resistance of the Se-passivated samples is ∼ 10% lower than that of the control samples. Transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy all confirm that the suppression of high-resistance Ni silicides below 500 °C is attributed to the suppression of silicidation and above 600 °C to the delay in Si-rich Ni silicide formation at the Ni/Se-passivated Si(100) interface.

AB - High-resistance phases of Ni-rich Ni silicide are formed on Si(100) below 400 °C, while high-resistance phases of Si-rich Ni silicide are formed above 600 °C. The desired low-resistance NiSi is formed between 400 °C and 600 °C. In this paper, the authors report the suppression of high-resistance phases of Ni silicide by passivating the Si(100) surface with a monolayer of Se. A 500-̊A Ni on n-type low 1015 cm-3 doped Si(100) wafers, passivated with Se, shows a sheet resistance of ∼ 2.55 Ω/square upon annealing between 200 °C and 500 °C, while the sheet resistance of the 500-̊A Ni on identical wafers without Se-passivation jumps to ∼ 7.92 Ω/square between 300 °C and 350 °C. Between 600 °C and 700 °C, the sheet resistance of the Se-passivated samples is ∼ 10% lower than that of the control samples. Transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy all confirm that the suppression of high-resistance Ni silicides below 500 °C is attributed to the suppression of silicidation and above 600 °C to the delay in Si-rich Ni silicide formation at the Ni/Se-passivated Si(100) interface.

KW - Integrated circuit metallization

KW - MOSFETs

KW - Nickel compounds

KW - Semiconductor-metal interfaces

KW - Surface treatment

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ER -

Suppression of high-resistance phases of Ni silicide by Se passivation of Si(100)

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