Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization

Yuji Zhao; Feng Wu; Chia Yen Huang; Yoshinobu Kawaguchi; Shinichi Tanaka; Kenji Fujito; James S. Speck; Steven P. Denbaars; Shuji Nakamura

doi:10.1063/1.4794864

Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization

Yuji Zhao, Feng Wu, Chia Yen Huang, Yoshinobu Kawaguchi, Shinichi Tanaka, Kenji Fujito, James S. Speck, Steven P. Denbaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report on void defect formation in (2021) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with 1011, 1010, and 0001 side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.

Original language	English (US)
Article number	091905
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4794864
State	Published - Mar 4 2013
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization",

abstract = "We report on void defect formation in (2021) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with 1011, 1010, and 0001 side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.",

author = "Yuji Zhao and Feng Wu and Huang, {Chia Yen} and Yoshinobu Kawaguchi and Shinichi Tanaka and Kenji Fujito and Speck, {James S.} and Denbaars, {Steven P.} and Shuji Nakamura",

note = "Funding Information: The authors acknowledge the support of Solid State Lighting and Energy Center at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR 1121053.",

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doi = "10.1063/1.4794864",

language = "English (US)",

volume = "102",

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T1 - Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization

AU - Zhao, Yuji

AU - Wu, Feng

AU - Huang, Chia Yen

AU - Kawaguchi, Yoshinobu

AU - Tanaka, Shinichi

AU - Fujito, Kenji

AU - Speck, James S.

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

N1 - Funding Information: The authors acknowledge the support of Solid State Lighting and Energy Center at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR 1121053.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - We report on void defect formation in (2021) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with 1011, 1010, and 0001 side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.

AB - We report on void defect formation in (2021) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with 1011, 1010, and 0001 side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.

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JF - Applied Physics Letters

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ER -

Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization

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