Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization

Yuji Zhao, Feng Wu, Chia Yen Huang, Yoshinobu Kawaguchi, Shinichi Tanaka, Kenji Fujito, James S. Speck, Steven P. Denbaars, Shuji Nakamura

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Abstract

We report on void defect formation in (2021) semipolar InGaN quantum wells (QWs) emitting in the green spectral region. Fluorescence and transmission electron microscopy studies indicate that this type of defect is associated with voids with 1011, 1010, and 0001 side facets in the QW region. Systematic growth studies show that this defect can be effectively suppressed by reducing the growth rate for the active region. Green light-emitting diodes (LEDs) with reduced active region growth rate showed enhanced power and wavelength performance. The improved LED performance is attributed to the absence of void defects in the active region.

Original languageEnglish (US)
Article number091905
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
StatePublished - Mar 4 2013

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhao, Y., Wu, F., Huang, C. Y., Kawaguchi, Y., Tanaka, S., Fujito, K., Speck, J. S., Denbaars, S. P., & Nakamura, S. (2013). Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization. Applied Physics Letters, 102(9), [091905]. https://doi.org/10.1063/1.4794864