In this work we experimentally demonstrated the near-field thermal radiation enhancement over the blackbody limit by 11 times between highly doped silicon chips with 1 × 1 cm2 size at a vacuum gap distance of 190 ± 20 nm under a temperature difference of 74.7 K above room temperature. SU-8 polymer posts, which significantly reduced the conduction below 6% of the total heat transfer due to its low thermal conductivity, were carefully fabricated with different heights to directly create vacuum gaps from 507 ± 47 nm down to 190 ± 20 nm precisely determined in situ by capacitance measurement. Experimental results were validated by theoretical calculations based on fluctuational electrodynamics, which revealed the enhancement mechanism mainly as coupled surface plasmon polaritons. The experimental method developed here will facilitate the potential applications of near-field radiative devices made of electrically conductive materials like metals, graphene, and transparent conductive oxide besides heavily doped semiconductors for thermal energy conversion, radiative thermal rectification, and radiative heat modulation.
- Near-field thermal radiation
- doped silicon
- surface plasmon polariton
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering