Abstract

Surface-sensitive UV Raman spectroscopy is used to analyze the crystallinity of silicon films less than 20nm thick directly on silicon wafers. The 325-nm excitation has a Raman detection thickness of only 13nm within the silicon film, thus eliminating signal from the substrate. We demonstrate measured crystallinities of microcrystalline silicon thin films that are consistent with the microstructure observed in transmission electron microscopy. Comparison is also made to ellipsometry, which is less able to accurately determine crystallinity than UV Raman spectroscopy. The UV Raman approach is particularly useful for layers grown on substrates of the same material but with different microstructure, and can be extended to non-silicon materials.

Original languageEnglish (US)
JournalPhysica Status Solidi (B) Basic Research
DOIs
StateAccepted/In press - 2017

Fingerprint

Microcrystalline silicon
Silicon
Ultraviolet spectroscopy
Raman spectroscopy
crystallinity
silicon films
Thin films
Microstructure
Ellipsometry
silicon
Substrates
thin films
Silicon wafers
microstructure
Transmission electron microscopy
ellipsometry
wafers
transmission electron microscopy
excitation

Keywords

  • Amorphous silicon
  • Ellipsometry
  • Microcrystalline silicon
  • Raman spectroscopy
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Substrate-independent analysis of microcrystalline silicon thin films using UV Raman spectroscopy. / Carpenter, Joe V.; Bailly, Mark; Boley, Allison; Shi, Jianwei; Minjares, Michael; Smith, David; Bowden, Stuart; Holman, Zachary.

In: Physica Status Solidi (B) Basic Research, 2017.

Research output: Contribution to journalArticle

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AU - Carpenter, Joe V.

AU - Bailly, Mark

AU - Boley, Allison

AU - Shi, Jianwei

AU - Minjares, Michael

AU - Smith, David

AU - Bowden, Stuart

AU - Holman, Zachary

PY - 2017

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AB - Surface-sensitive UV Raman spectroscopy is used to analyze the crystallinity of silicon films less than 20nm thick directly on silicon wafers. The 325-nm excitation has a Raman detection thickness of only 13nm within the silicon film, thus eliminating signal from the substrate. We demonstrate measured crystallinities of microcrystalline silicon thin films that are consistent with the microstructure observed in transmission electron microscopy. Comparison is also made to ellipsometry, which is less able to accurately determine crystallinity than UV Raman spectroscopy. The UV Raman approach is particularly useful for layers grown on substrates of the same material but with different microstructure, and can be extended to non-silicon materials.

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KW - Microcrystalline silicon

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