Substrate dependent growth of microcrystalline silicon

Mark Bailly, Joe V. Carpenter, Zachary Holman, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Silicon (Si) heterojunction solar cells with efficiencies approaching 24.7% are poised to replace Si diffused junction solar cells. To further improve their efficiency, microcrystalline Si (μc-Si) could replace the amorphous Si (a-Si) emitter layer, thus improving the effective doping and increasing transparency. This improvement in efficiency would come at little additional cost and could be accomplished by altering the plasma-enhanced chemical vapor deposition (PECVD) conditions. A μc-Si film was deposited on glass, a-Si, c-Si, silicon dioxide, and sapphire. When integrated over the AM 1.5G spectrum, the a-Si:H film absorbs 3 mA/cm2 the 50% crystalline μc-Si:H film absorbs 1.7 mA/cm2.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1201-1205
Number of pages5
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • amorphous materials
  • heterojunction
  • microcrystals
  • photovoltaic cells
  • silicon
  • substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Bailly, M., Carpenter, J. V., Holman, Z., & Bowden, S. (2014). Substrate dependent growth of microcrystalline silicon. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1201-1205). [6925130] (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925130