Substrate and passivation techniques for flexible amorphous silicon-based X-ray detectors

Michael A. Marrs; Gregory Raupp

doi:10.3390/s16081162

Substrate and passivation techniques for flexible amorphous silicon-based X-ray detectors

Michael A. Marrs, Gregory Raupp

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 μm-thick polyimide substrate.

Original language	English (US)
Article number	1162
Journal	Sensors (Switzerland)
Volume	16
Issue number	8
DOIs	https://doi.org/10.3390/s16081162
State	Published - Aug 2016

Keywords

Amorphous silicon PIN diodes
Flexible X-ray detectors
Flexible displays
Flexible electronics
Passivation

ASJC Scopus subject areas

Analytical Chemistry
Information Systems
Instrumentation
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering
Biochemistry

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10.3390/s16081162

Cite this

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title = "Substrate and passivation techniques for flexible amorphous silicon-based X-ray detectors",

abstract = "Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 μm-thick polyimide substrate.",

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Substrate and passivation techniques for flexible amorphous silicon-based X-ray detectors

Abstract

Keywords

ASJC Scopus subject areas

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