Substitutional C fraction and the influence of C on Si dimer diffusion in Si1-yCy alloys grown on (001) and (118) Si

E. T. Croke, F. Grosse, J. J. Vajo, M. F. Gyure, M. Floyd, David Smith

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Abstract

The dependence of substitutional C fraction on growth temperature and substrate orientation is measured for Si1-yCy. alloy films grown on (001) and (118) Si by molecular-beam epitaxy. Secondary ion mass spectrometry and high-resolution x-ray diffraction were used to measure the total C and the substitutional C concentrations, respectively, in several samples prepared at temperatures between 450 and 650°C. The substitutional C fraction decreased rapidly with increasing temperature in this range, regardless of orientation, and was slightly lower for growth on (118) Si. Cross-sectional transmission electron microscopy on (118)-oriented samples revealed a tendency for C to concentrate periodically on (001) facets which formed immediately after initiation of Si1-yCy growth. A kinetic Monte Carlo simulation based upon enhanced diffusion of Si dimers in the presence of subsurface C predicted a step instability leading to step bunching and the formation of periodic surface features, as well as the accumulation of high C concentrations on nearly (001) planes.

Original languageEnglish (US)
Pages (from-to)1310-1312
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number9
DOIs
StatePublished - Aug 28 2000

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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