Substantial crystalline topology in amorphous silicon

J. M. Gibson, Michael Treacy, T. Sun, N. J. Zaluzec

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Using electron correlograph analysis we show that coherent nanodiffraction patterns from sputtered amorphous silicon indicate that there is more local crystallinity in unannealed amorphous silicon than was previously suspected. By comparing with simulations for various models we show that within a typical unannealed amorphous silicon film a substantial volume fraction (>50%) is topologically crystalline with correlation lengths up to 2A nm. Electron correlograph analysis is a variant of the fluctuation electron microscopy technique and its sensitivity to local crystalline ordering is derived from its sensitivity to four-body correlations.

Original languageEnglish (US)
Article number125504
JournalPhysical Review Letters
Volume105
Issue number12
DOIs
StatePublished - Sep 17 2010

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amorphous silicon
topology
sensitivity
silicon films
crystallinity
electron microscopy
electrons
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Substantial crystalline topology in amorphous silicon. / Gibson, J. M.; Treacy, Michael; Sun, T.; Zaluzec, N. J.

In: Physical Review Letters, Vol. 105, No. 12, 125504, 17.09.2010.

Research output: Contribution to journalArticle

Gibson, J. M. ; Treacy, Michael ; Sun, T. ; Zaluzec, N. J. / Substantial crystalline topology in amorphous silicon. In: Physical Review Letters. 2010 ; Vol. 105, No. 12.
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