Subpicosecond transient Raman scattering studies of field-induced electron transport in an In0.53Ga0.47As based p-i-n nanostructure: Direct observation of the effects of electron momentum randomization

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

Subpicosecond transient Raman spectroscopy has been used to study electron transport properties of an In0.53Ga0.47As based p-i-n nanostructure. Both the electron distribution function and the electron drift velocity have been directly measured as a function of the photoexcited electron-hole pair density. We have found that, at low electron-hole pair densities such as n ≤ 5 × 1016cm-3, the electron distribution function has an extremely non-Maxwellian shape. However, as the photoexcited electron pair density gradually increases, the non-Maxwellian distribution gradually evolves into a shifted Maxwellian distribution. We attribute these findings to the direct effects of the role of electron-electron scattering in momentum randomization.

Original languageEnglish (US)
Article numberL01
Pages (from-to)L585-L592
JournalJournal of Physics Condensed Matter
Volume18
Issue number47
DOIs
StatePublished - Nov 29 2006

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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