Subpicosecond time-resolved Raman studies of non-equilibrium excitations in wide bandgap GaN

Kong-Thon Tsen, R. P. Joshi, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that for electron densities n ≥ 5×10 17cm -3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron-longitudinal optical phonon scattering rate to the much larger ionicity in GaN.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages304-313
Number of pages10
Volume3277
DOIs
StatePublished - 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
Country/TerritoryUnited States
CitySan Jose, CA
Period1/28/981/29/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Subpicosecond time-resolved Raman studies of non-equilibrium excitations in wide bandgap GaN'. Together they form a unique fingerprint.

Cite this