Abstract
We have studied non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN by subpicosecond time-resolved Raman spectroscopy. Our experimental results show that for electron densities n ≥ 5×10 17cm -3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the effective electron temperature much higher than the lattice temperature. In addition, we find that the total electron-longitudinal optical phonon scattering rate in GaN is about one order of magnitude larger than that in GaAs. We attribute this enormous increase in the electron-longitudinal optical phonon scattering rate to the much larger ionicity in GaN.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | K.T. Tsen, H.R. Fetterman |
Pages | 304-313 |
Number of pages | 10 |
Volume | 3277 |
DOIs | |
State | Published - 1998 |
Event | Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
Other
Other | Ultrafast Phenomena in Semiconductors II |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/28/98 → 1/29/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics