Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Kong-Thon Tsen; Juliann G. Kiang; D. K. Ferry; H. Morkoç

doi:10.1063/1.2349315

Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, H. Morkoç

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 ¹⁶ to 2 × 10 ¹⁹ cm ^-3. The lifetime has been found to decrease from 2.5 ps, at low density, to 0.35 ps, at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Original language	English (US)
Article number	112111
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2349315
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2349315

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title = "Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density",

abstract = "Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 16 to 2 × 10 19 cm -3. The lifetime has been found to decrease from 2.5 ps, at low density, to 0.35 ps, at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.",

author = "Kong-Thon Tsen and Kiang, {Juliann G.} and Ferry, {D. K.} and H. Morko{\c c}",

note = "Funding Information: This work is supported by the National Science Foundation under Grant No. DMR-0305147. The work at VCU is supported by the Air Force Office of Scientific Research under the direction of K. Reinhardt. The authors would like to thank Steve Goodnick and Arvydas Matulionis for helpful discussions.",

year = "2006",

doi = "10.1063/1.2349315",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Subpicosecond time-resolved Raman studies of LO phonons in GaN

T2 - Dependence on photoexcited carrier density

AU - Tsen, Kong-Thon

AU - Kiang, Juliann G.

AU - Ferry, D. K.

AU - Morkoç, H.

N1 - Funding Information: This work is supported by the National Science Foundation under Grant No. DMR-0305147. The work at VCU is supported by the Air Force Office of Scientific Research under the direction of K. Reinhardt. The authors would like to thank Steve Goodnick and Arvydas Matulionis for helpful discussions.

PY - 2006

Y1 - 2006

N2 - Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 16 to 2 × 10 19 cm -3. The lifetime has been found to decrease from 2.5 ps, at low density, to 0.35 ps, at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

AB - Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 16 to 2 × 10 19 cm -3. The lifetime has been found to decrease from 2.5 ps, at low density, to 0.35 ps, at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

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Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

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