Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, H. Morkoç

Research output: Contribution to journalArticlepeer-review

97 Scopus citations

Abstract

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN for photoexcited electron-hole pair density ranging from 10 16 to 2 × 10 19 cm -3. The lifetime has been found to decrease from 2.5 ps, at low density, to 0.35 ps, at the highest density. The experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Original languageEnglish (US)
Article number112111
JournalApplied Physics Letters
Volume89
Issue number11
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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