Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure

E. D. Grann, Kong-Thon Tsen, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 10 17cm -3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfatory agreement is obtained.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages292-303
Number of pages12
Volume3277
DOIs
StatePublished - 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
CountryUnited States
CitySan Jose, CA
Period1/28/981/29/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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