Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure

E. D. Grann; Kong-Thon Tsen; D. K. Ferry; A. Salvador; A. Botcharev; H. Morkoc

doi:10.1117/12.306167

Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure

E. D. Grann, Kong-Thon Tsen, D. K. Ferry, A. Salvador, A. Botcharev, H. Morkoc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 10 ¹⁷cm ^-3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfatory agreement is obtained.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.T. Tsen, H.R. Fetterman
Pages	292-303
Number of pages	12
Volume	3277
DOIs	https://doi.org/10.1117/12.306167
State	Published - 1998
Event	Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998

Other

Other	Ultrafast Phenomena in Semiconductors II
Country/Territory	United States
City	San Jose, CA
Period	1/28/98 → 1/29/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.306167

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Grann, E. D., Tsen, K.-T., Ferry, D. K., Salvador, A., Botcharev, A., & Morkoc, H. (1998). Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 292-303) https://doi.org/10.1117/12.306167

Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure. / Grann, E. D.; Tsen, Kong-Thon; Ferry, D. K. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; H.R. Fetterman. Vol. 3277 1998. p. 292-303.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grann, ED, Tsen, K-T, Ferry, DK, Salvador, A, Botcharev, A & Morkoc, H 1998, Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure. in KT Tsen & HR Fetterman (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3277, pp. 292-303, Ultrafast Phenomena in Semiconductors II, San Jose, CA, United States, 1/28/98. https://doi.org/10.1117/12.306167

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title = "Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure",

abstract = "Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 10 17cm -3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfatory agreement is obtained. ",

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AU - Grann, E. D.

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AU - Ferry, D. K.

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoc, H.

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N2 - Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 10 17cm -3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfatory agreement is obtained.

AB - Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 10 17cm -3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfatory agreement is obtained.

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Subpicosecond time-resolved Raman studies of field-induced electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure

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