Subpicosecond time-resolved Raman studies of ballistic electron transport in InP

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron ballistic transport and in a InP-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 300 K. The time-evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×10 16 cm -3, electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages262-269
Number of pages8
Volume3940
StatePublished - 2000
EventUltrafast Phenomena in Semiconductors IV - San Jose, CA, USA
Duration: Jan 27 2000Jan 28 2000

Other

OtherUltrafast Phenomena in Semiconductors IV
CitySan Jose, CA, USA
Period1/27/001/28/00

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Tsen, K-T., Ferry, D. K., Wang, J. S., Huang, C. H., & Lin, H. H. (2000). Subpicosecond time-resolved Raman studies of ballistic electron transport in InP. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3940, pp. 262-269). Society of Photo-Optical Instrumentation Engineers.