Abstract
Electron ballistic transport and in a InP-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 300 K. The time-evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×10 16 cm -3, electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.
| Original language | English (US) |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 262-269 |
| Number of pages | 8 |
| Volume | 3940 |
| State | Published - 2000 |
| Event | Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000 |
Other
| Other | Ultrafast Phenomena in Semiconductors IV |
|---|---|
| City | San Jose, CA, USA |
| Period | 1/27/00 → 1/28/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics