Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs-AlxGa1-xAs multiple-quantum-well structures

Kong-Thon Tsen, H. Morkoç

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Time-resolved Raman spectra of GaAs-AlxGa1-xAs multiple-quantum-well structures have been measured with subpicosecond time resolution. The average electron LO-phonon scattering time for the electrons occupying the unbound states is resolved and found to be about 170 fs and is not affected appreciably by the well thickness.

Original languageEnglish (US)
Pages (from-to)5615-5616
Number of pages2
JournalPhysical Review B
Volume38
Issue number8
DOIs
StatePublished - 1988

Fingerprint

Phonon scattering
Electron scattering
Phonons
Semiconductor quantum wells
Raman spectroscopy
Raman scattering
phonons
quantum wells
Electrons
electrons
Raman spectra
scattering
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs-AlxGa1-xAs multiple-quantum-well structures. / Tsen, Kong-Thon; Morkoç, H.

In: Physical Review B, Vol. 38, No. 8, 1988, p. 5615-5616.

Research output: Contribution to journalArticle

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