Subpicosecond Raman studies of non-equilibrium electron transport in an In 0.4Ga 0.6N epilayer grown on GaN

W. Liang, Kong-Thon Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Field-induced electron transport in an In xGa 1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa 1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, J.J. Song, H. Jiang
Pages404-411
Number of pages8
Volume5352
DOIs
StatePublished - 2004
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States
Duration: Jan 26 2004Jan 29 2004

Other

OtherUltrafast Phenomena in Semiconductors and Nanostructure Materials VIII
CountryUnited States
CitySan Jose, CA
Period1/26/041/29/04

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Liang, W., Tsen, K-T., Ferry, D. K., Kim, K. H., Lin, J. Y., & Jiang, H. X. (2004). Subpicosecond Raman studies of non-equilibrium electron transport in an In 0.4Ga 0.6N epilayer grown on GaN In K. T. Tsen, J. J. Song, & H. Jiang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5352, pp. 404-411) https://doi.org/10.1117/12.528322