Subpicosecond Raman studies of non-equilibrium electron transport in an In 
            0.4Ga 
            0.6N epilayer grown on GaN

W. Liang; Kong-Thon Tsen; D. K. Ferry; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1117/12.528322

Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN

W. Liang, Kong-Thon Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Field-induced electron transport in an In _xGa _1-xN (x ≅ 0.4 ) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In _xGa _1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	K.T. Tsen, J.J. Song, H. Jiang
Pages	404-411
Number of pages	8
Volume	5352
DOIs	https://doi.org/10.1117/12.528322
State	Published - 2004
Event	Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII - San Jose, CA, United States Duration: Jan 26 2004 → Jan 29 2004

Other

Other	Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII
Country/Territory	United States
City	San Jose, CA
Period	1/26/04 → 1/29/04

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.528322

Cite this

Liang, W., Tsen, K.-T., Ferry, D. K., Kim, K. H., Lin, J. Y., & Jiang, H. X. (2004). Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN In K. T. Tsen, J. J. Song, & H. Jiang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5352, pp. 404-411) https://doi.org/10.1117/12.528322

Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN . / Liang, W.; Tsen, Kong-Thon; Ferry, D. K. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / K.T. Tsen; J.J. Song; H. Jiang. Vol. 5352 2004. p. 404-411.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liang, W, Tsen, K-T, Ferry, DK, Kim, KH, Lin, JY & Jiang, HX 2004, Subpicosecond Raman studies of non-equilibrium electron transport in an In _0.4Ga _0.6N epilayer grown on GaN in KT Tsen, JJ Song & H Jiang (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5352, pp. 404-411, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, San Jose, CA, United States, 1/26/04. https://doi.org/10.1117/12.528322

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