Subpicosecond Raman studies of electric-field-induced optical phonon instability in an In0.53Ga0.47As-based semiconductor nanostructure

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, V. A. Kochelap, S. M. Komirenko, K. W. Kim, H. Morkoc

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Transient carrier transport phenomena in an In0.53Ga 0.47As-based p-i-n semiconductor nanostructure have been studied by using subpicosecond transient/time-resolved Raman spectroscopy. We observe an instability of the GaAs-like optical phonon population in this nanostructure semiconductor that occurs when electrons are accelerated to very high velocities by the application of intense electric fields. The results open up a new channel for creating coherent THz frequency that can be used in THz electronic devices. We suggest that the observed phenomena will have enormous impact on the carrier dynamics and carrier transport in nanoscale semiconductor electronic devices.

Original languageEnglish (US)
Article number009
Pages (from-to)7961-7974
Number of pages14
JournalJournal of Physics Condensed Matter
Issue number34
StatePublished - Aug 30 2006

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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