Subband diffusion models for quantum transport in a strong force regime

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We derive semiclassical approximations to quantum transport models in thin slabs with applications to SOI (silicon oxide on insulator)-type semiconductor devices via a subband approach. In the regime considered, the forces acting on the particles across the slab are much larger than the forces in the lateral direction of the slab. In a semiclassical limit the transport picture can be described on large time scales by a system of subband convection-diffusion equations with an interband collision operator, modeling the transfer of mass (charge) between the different eigenspaces and driving the system towards a local Maxwellian equilibrium.

Original languageEnglish (US)
Pages (from-to)1871-1895
Number of pages25
JournalSIAM Journal on Applied Mathematics
Volume71
Issue number6
DOIs
StatePublished - 2011

Fingerprint

Quantum Transport
Silicon oxides
Diffusion Model
Semiconductor devices
Semiclassical Approximation
Local Equilibrium
Semiclassical Limit
Semiconductor Devices
Eigenspace
Insulator
Convection-diffusion Equation
Oxides
Lateral
Silicon
Time Scales
Collision
Charge
Operator
Modeling
Convection

Keywords

  • Quantum hydrodynamics
  • Quantum transport
  • Semiclassical limits
  • Wigner functions

ASJC Scopus subject areas

  • Applied Mathematics

Cite this

Subband diffusion models for quantum transport in a strong force regime. / Ringhofer, Christian.

In: SIAM Journal on Applied Mathematics, Vol. 71, No. 6, 2011, p. 1871-1895.

Research output: Contribution to journalArticle

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