Sub-threshold electron mobility in SOI MESFET

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/μm) and small drain voltages required for saturation (Vdsat ∼150-200mV). Unfortunately, sub-threshold CMOS is a slow technology, with micropower circuits limited to operating frequencies below ∼1 MHz. To achieve higher sub-threshold operating frequencies, we have proposed a Schottky Junction Transistor (SJT) as an alternative to sub-threshold MOSFET devices. It adopts a MESFET architecture and exhibits higher electron mobility. The enhanced MESFET mobility leads to a corresponding increase in the cut-off frequency f T compared to a similar gate length MOSFET carrying the same amount of current.

Original languageEnglish (US)
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages49-51
Number of pages3
StatePublished - Nov 2 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: Mar 7 2004Mar 11 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Other

Other2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period3/7/043/11/04

Keywords

  • Micropower
  • Schottky Junction Transistor (SJT)
  • Subthreshold conduction

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Khan, T., Vasileska, D., & Thornton, T. (2004). Sub-threshold electron mobility in SOI MESFET. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 49-51). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).