@inproceedings{9f5f6901391e4f77b00972bdae5c0452,
title = "Sub-threshold electron mobility in SOI MESFET",
abstract = "Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/μm) and small drain voltages required for saturation (Vdsat ∼150-200mV). Unfortunately, sub-threshold CMOS is a slow technology, with micropower circuits limited to operating frequencies below ∼1 MHz. To achieve higher sub-threshold operating frequencies, we have proposed a Schottky Junction Transistor (SJT) as an alternative to sub-threshold MOSFET devices. It adopts a MESFET architecture and exhibits higher electron mobility. The enhanced MESFET mobility leads to a corresponding increase in the cut-off frequency f T compared to a similar gate length MOSFET carrying the same amount of current.",
keywords = "Micropower, Schottky Junction Transistor (SJT), Subthreshold conduction",
author = "T. Khan and Dragica Vasileska and Trevor Thornton",
year = "2004",
month = nov,
day = "2",
language = "English (US)",
isbn = "0972842276",
series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",
pages = "49--51",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",
note = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 ; Conference date: 07-03-2004 Through 11-03-2004",
}