TY - GEN
T1 - Sub-surface laser damage in sapphire and silicon
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
AU - Dahal, Som Nath
AU - Lebeau, James A.
AU - Bowden, Stuart
AU - Honsberg, Christiana
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.
AB - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.
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U2 - 10.1109/PVSC.2017.8366076
DO - 10.1109/PVSC.2017.8366076
M3 - Conference contribution
AN - SCOPUS:85048490128
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 367
EP - 369
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 25 June 2017 through 30 June 2017
ER -
