Sub-surface laser damage in sapphire and silicon: A path towards laser wafering

Som Nath Dahal; James A. Lebeau; Stuart Bowden; Christiana Honsberg

doi:10.1109/PVSC.2017.8366076

Sub-surface laser damage in sapphire and silicon: A path towards laser wafering

Som Nath Dahal, James A. Lebeau, Stuart Bowden, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366076
State	Published - May 25 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	6/25/17 → 6/30/17

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/PVSC.2017.8366076

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Dahal, S. N., Lebeau, J. A., Bowden, S., & Honsberg, C. (2018). Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366076

Sub-surface laser damage in sapphire and silicon : A path towards laser wafering. / Dahal, Som Nath; Lebeau, James A.; Bowden, Stuart ; Honsberg, Christiana.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dahal, SN, Lebeau, JA, Bowden, S & Honsberg, C 2018, Sub-surface laser damage in sapphire and silicon: A path towards laser wafering. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366076

@inproceedings{bb44fed4bb1d4d28ba5588dc71e48052,

title = "Sub-surface laser damage in sapphire and silicon: A path towards laser wafering",

abstract = "A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.",

author = "Dahal, {Som Nath} and Lebeau, {James A.} and Stuart Bowden and Christiana Honsberg",

year = "2018",

month = may,

day = "25",

doi = "10.1109/PVSC.2017.8366076",

language = "English (US)",

pages = "1--3",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

}

TY - GEN

T1 - Sub-surface laser damage in sapphire and silicon

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Dahal, Som Nath

AU - Lebeau, James A.

AU - Bowden, Stuart

AU - Honsberg, Christiana

PY - 2018/5/25

Y1 - 2018/5/25

N2 - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.

AB - A variable wavelength nanosecond pulsed laser is used to create and characterize the subsurface damage in Sapphire and Silicon. The high intensity laser light of wavelengths that are transparent to crystalline Sapphire and silicon is used. The depth and size of the damage spots are compared with a ray-optics model and electron plasma breakdown model. The effect of focusing optics, number of shots, numerical aperture (NA) of the focusing optic on the experimentally measured subsurface damage spot size is presented. A range of spot sizes were formed from 100-300 μm in the bulk of sapphire without damaging the surface. Preferential chemical etchants and or cleaving methods will be implemented to peel thin wafers from the thicker ones. These results and the understanding in the fields of bulk material modification and internal laser micromachining of semiconductors will be implemented towards the laser wafering.

UR - http://www.scopus.com/inward/record.url?scp=85048490128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048490128&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366076

DO - 10.1109/PVSC.2017.8366076

M3 - Conference contribution

AN - SCOPUS:85048490128

SP - 1

EP - 3

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -