TY - GEN
T1 - Sub-bandgap features in CdSeTe solar cells
T2 - 48th IEEE Photovoltaic Specialists Conference, PVSC 2021
AU - Onno, Arthur
AU - Li, Siming
AU - Reich, Carey
AU - Danielson, Adam
AU - Weigand, William
AU - Sampath, Walajabad
AU - Kuciauskas, Darius
AU - Holman, Zachary C.
N1 - Funding Information:
The information, data, or work presented herein is funded in part by the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, under Award Numbers DE-EE0008552 and DE-EE0008557. Funding was provided in part by the National Science Foundation under award No. 1846685. This work was authored in part by the National Renewable Energy Laboratory, operated by Alliance for Sustainable Energy, LLC, for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. The views expressed herein do not necessarily represent the views of the DOE or the U.S. Government. The U.S. Government retains and the publisher, by accepting the article for publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this work, or allow others to do so, for U.S. Government purposes. The team at Colorado State University would like to thank 5N Plus for providing the CdTe, CdSeTe and CdCl2 source materials.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - In this contribution, we investigate why different dopant species and back-contact architectures lead to different sub-bandgap behaviors in CdSeTe solar cells. Through extraction of the absorptance from photoluminescence spectra, we parse the contributions from material properties and from cell optics. We show that, as expected, arsenic doping leads to an increase in sub-bandgap features over traditional copper doping, and that this is a material property of arsenic-doped CdSeTe. Conversely, the increase in sub-bandgap absorption and emission using alternative back contact architectures can be attributed to the cell optics, and more specifically to the increased reflectance of the back interface, leading to at least a doubling of the pathlength for sub-bandgap photons.
AB - In this contribution, we investigate why different dopant species and back-contact architectures lead to different sub-bandgap behaviors in CdSeTe solar cells. Through extraction of the absorptance from photoluminescence spectra, we parse the contributions from material properties and from cell optics. We show that, as expected, arsenic doping leads to an increase in sub-bandgap features over traditional copper doping, and that this is a material property of arsenic-doped CdSeTe. Conversely, the increase in sub-bandgap absorption and emission using alternative back contact architectures can be attributed to the cell optics, and more specifically to the increased reflectance of the back interface, leading to at least a doubling of the pathlength for sub-bandgap photons.
KW - arsenic doping
KW - cadmium selenide telluride
KW - photoluminescence
KW - sub-bandgap features
UR - http://www.scopus.com/inward/record.url?scp=85115966566&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85115966566&partnerID=8YFLogxK
U2 - 10.1109/PVSC43889.2021.9518829
DO - 10.1109/PVSC43889.2021.9518829
M3 - Conference contribution
AN - SCOPUS:85115966566
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1754
EP - 1757
BT - 2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 20 June 2021 through 25 June 2021
ER -