Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Emanuele Francesco Pecora, Wei Zhang, A. Yu. Nikiforov, Lin Zhou, David Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas

Research output: Contribution to journalArticle

45 Scopus citations

Abstract

Deep-UV optical gain has been demonstrated in Al 0.7Ga 0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm -1 has been measured and the transparency threshold of 5 ± 1 μJ/cm 2 was experimentally determined, corresponding to 1.4 × 10 17cm -3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

Original languageEnglish (US)
Article number061111
JournalApplied Physics Letters
Volume100
Issue number6
DOIs
StatePublished - Feb 6 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Francesco Pecora, E., Zhang, W., Yu. Nikiforov, A., Zhou, L., Smith, D., Yin, J., Paiella, R., Dal Negro, L., & Moustakas, T. D. (2012). Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations. Applied Physics Letters, 100(6), [061111]. https://doi.org/10.1063/1.3681944