Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Emanuele Francesco Pecora; Wei Zhang; A. Yu. Nikiforov; Lin Zhou; David Smith; Jian Yin; Roberto Paiella; Luca Dal Negro; T. D. Moustakas

doi:10.1063/1.3681944

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Emanuele Francesco Pecora, Wei Zhang, A. Yu. Nikiforov, Lin Zhou, David Smith, Jian Yin, Roberto Paiella, Luca Dal Negro, T. D. Moustakas

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Deep-UV optical gain has been demonstrated in Al _0.7Ga _0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm ^-1 has been measured and the transparency threshold of 5 ± 1 μJ/cm ² was experimentally determined, corresponding to 1.4 × 10 ¹⁷cm ^-3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

Original language	English (US)
Article number	061111
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3681944
State	Published - Feb 6 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3681944

Cite this

@article{efb1ed914af344eab13825adab7d7c0e,

title = "Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations",

abstract = "Deep-UV optical gain has been demonstrated in Al 0.7Ga 0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm -1 has been measured and the transparency threshold of 5 ± 1 μJ/cm 2 was experimentally determined, corresponding to 1.4 × 10 17cm -3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.",

author = "{Francesco Pecora}, Emanuele and Wei Zhang and {Yu. Nikiforov}, A. and Lin Zhou and David Smith and Jian Yin and Roberto Paiella and {Dal Negro}, Luca and Moustakas, {T. D.}",

note = "Funding Information: The work was supported by the Defense Advanced Research Projects Agency CMUVT Program (PM: Dr. John Albrecht) under subcontract from Photon Systems Inc. (U.S. Army Cooperative Agreement No. W911NF-11-1-0034. We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2012",

month = feb,

day = "6",

doi = "10.1063/1.3681944",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

AU - Francesco Pecora, Emanuele

AU - Zhang, Wei

AU - Yu. Nikiforov, A.

AU - Zhou, Lin

AU - Smith, David

AU - Yin, Jian

AU - Paiella, Roberto

AU - Dal Negro, Luca

AU - Moustakas, T. D.

N1 - Funding Information: The work was supported by the Defense Advanced Research Projects Agency CMUVT Program (PM: Dr. John Albrecht) under subcontract from Photon Systems Inc. (U.S. Army Cooperative Agreement No. W911NF-11-1-0034. We also acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2012/2/6

Y1 - 2012/2/6

N2 - Deep-UV optical gain has been demonstrated in Al 0.7Ga 0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm -1 has been measured and the transparency threshold of 5 ± 1 μJ/cm 2 was experimentally determined, corresponding to 1.4 × 10 17cm -3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

AB - Deep-UV optical gain has been demonstrated in Al 0.7Ga 0.3N/AlN multiple quantum wells under femtosecond optical pumping. Samples were grown by molecular beam epitaxy under a growth mode that introduces band structure potential fluctuations and high-density nanocluster-like features within the AlGaN wells. A maximum net modal gain value of 118 ± 9 cm -1 has been measured and the transparency threshold of 5 ± 1 μJ/cm 2 was experimentally determined, corresponding to 1.4 × 10 17cm -3 excited carriers. These findings pave the way for the demonstration of solid-state lasers with sub-250 nm emission at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84863149574&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863149574&partnerID=8YFLogxK

U2 - 10.1063/1.3681944

DO - 10.1063/1.3681944

M3 - Article

AN - SCOPUS:84863149574

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061111

ER -

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this