@article{b2f5d22a1c7c4fba965d162cdc9d81c9,
title = "Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors",
abstract = "We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an AlxGa1-xN-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm2. After employing high-reflectivity SiO2/HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm2. The internal loss and threshold modal gain can be calculated as 2 cm-1 and 10.9 cm -1, respectively.",
author = "Kao, {Tsung Ting} and Liu, {Yuh Shiuan} and {Mahbub Satter}, Md and Li, {Xiao Hang} and Zachary Lochner and {Douglas Yoder}, P. and Theeradetch Detchprohm and Dupuis, {Russell D.} and Shen, {Shyh Chiang} and Ryou, {Jae Hyun} and Fischer, {Alec M.} and Yong Wei and Hongen Xie and Fernando Ponce",
note = "Funding Information: This work was supported by the Defense Advanced Research Projects Agency under Contract No. FA2386-10-1-4152. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. ",
year = "2013",
month = nov,
day = "18",
doi = "10.1063/1.4829477",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",
}