Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors

Tsung Ting Kao, Yuh Shiuan Liu, Md Mahbub Satter, Xiao Hang Li, Zachary Lochner, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Shyh Chiang Shen, Jae Hyun Ryou, Alec M. Fischer, Yong Wei, Hongen Xie, Fernando Ponce

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Abstract

We report a sub-250-nm, optically pumped, deep-ultraviolet laser using an AlxGa1-xN-based multi-quantum-well structure grown on a bulk Al-polar c-plane AlN substrate. TE-polarization-dominant lasing action was observed at room temperature with a threshold pumping power density of 250 kW/cm2. After employing high-reflectivity SiO2/HfO 2 dielectric mirrors on both facets, the threshold pumping power density was further reduced to 180 kW/cm2. The internal loss and threshold modal gain can be calculated as 2 cm-1 and 10.9 cm -1, respectively.

Original languageEnglish (US)
Article number211103
JournalApplied Physics Letters
Volume103
Issue number21
DOIs
StatePublished - Nov 18 2013

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kao, T. T., Liu, Y. S., Mahbub Satter, M., Li, X. H., Lochner, Z., Douglas Yoder, P., Detchprohm, T., Dupuis, R. D., Shen, S. C., Ryou, J. H., Fischer, A. M., Wei, Y., Xie, H., & Ponce, F. (2013). Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors. Applied Physics Letters, 103(21), [211103]. https://doi.org/10.1063/1.4829477