SUB-100 nm GATE LENGTH GaAs MESFETS FABRICATED BY MOLECULAR BEAM EPITAXY AND ELECTRON BEAM LITHOGRAPHY.

David Allee, P. R. de la Houssaye, D. G. Schlom, B. W. Langley, J. S. Harris, R. F W Pease

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

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Engineering & Materials Science