SUB-100 nm GATE LENGTH GaAs MESFETS FABRICATED BY MOLECULAR BEAM EPITAXY AND ELECTRON BEAM LITHOGRAPHY.

David Allee, P. R. de la Houssaye, D. G. Schlom, B. W. Langley, J. S. Harris, R. F W Pease

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

A fabrication process for MESFETs with sub-100-nm recessed gates is discussed. This process incorporates ultra-high-resolution electron beam lithography for the gate definition and molecular beam epitaxy for wafer growth. Extensive DC electrical characteristics are presented for two MESFET structures: one with a lightly doped, thick channel and the other with a thin, heavily doped channel. The advantages of a superconducting gate electrode for sub-100-nm-gate-length MESFETs are discussed.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
Place of PublicationNew York, NY, USA
PublisherIEEE
Pages190-198
Number of pages9
StatePublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Allee, D., de la Houssaye, P. R., Schlom, D. G., Langley, B. W., Harris, J. S., & Pease, R. F. W. (1987). SUB-100 nm GATE LENGTH GaAs MESFETS FABRICATED BY MOLECULAR BEAM EPITAXY AND ELECTRON BEAM LITHOGRAPHY. In Unknown Host Publication Title (pp. 190-198). IEEE.