A fabrication process for MESFETs with sub-100-nm recessed gates is discussed. This process incorporates ultra-high-resolution electron beam lithography for the gate definition and molecular beam epitaxy for wafer growth. Extensive DC electrical characteristics are presented for two MESFET structures: one with a lightly doped, thick channel and the other with a thin, heavily doped channel. The advantages of a superconducting gate electrode for sub-100-nm-gate-length MESFETs are discussed.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Place of Publication||New York, NY, USA|
|Number of pages||9|
|State||Published - 1987|
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