Studying edge losses in silicon heterojunction solar cells

Pradeep Balaji, Stuart Bowden, Andre Augusto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this manuscript we study the impact of edge losses in silicon heterojunction solar cells. The edge of the cells may play a larger role due to the large diffusion length of the carriers and the presence of a high conductive layer in this type of architecture. We fabricate silicon heterojunction solar cells with different areas and masking schemes to evaluate the impact of the edge on the open-circuit voltage. We measured lower open-circuit voltages on cells which have larger ratio of cell perimeter-to-area but have similar lifetimes and similar implied characteristics. The solar cell with 6 cm2 shows open-circuit voltage 7 mV lower than the cell with 150.3 cm2. Electroluminescence and photoluminescence imaging are used to evaluate the diffusion of carriers at the edges of the cells. We show the out diffusion of carriers at the edges of the cell which demonstrates the cell is affected by the surroundings.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2203-2206
Number of pages4
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
CountryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • edge recombination
  • open-circuit voltage loss
  • silicon

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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